High electron mobility transistor small signal model

被引：0
|
作者：
Yemtsev, PA [1 ]
Sunduchkov, IK [1 ]
Sunduchkov, KS [1 ]
Shelkovnikov, BN [1 ]
机构：
[1] Natl Tech Univ Ukraine, KPI, Kiev, Ukraine
来源：
14th International Crimean Conference: Microwave & Telecommunication Technology, Conference Proceedings | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
ATF-36077 high electron mobility transistor small signal model is represented for booth packaged and unpackaged cases. Model parameter extraction procedure is presented. It is shown, that using the transistor withowt package gives a possibility to expand amplifier frequency range more than twice.
引用
收藏
页码：161 / 163
页数：3
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