AIGaN/GaN high electron mobility transistors with inclined-gate-recess structure

被引：0
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作者：
Aoi, Yuma [1 ]
Ohno, Yutaka [1 ]
Kishimoto, Shigeru [1 ]
Maezawa, Koichi [1 ]
Mizutani, Takashi [1 ,2 ]
机构：
[1] Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
[2] Institute for Advanced Research, Nagoya University, Nagoya 464-8601, Japan
来源：
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | 1600年 / 4 B卷 / 3368-3371期
关键词：
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摘要：
Electric currents - Electric fields - Frequencies - Gallium nitride
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