AIGaN/GaN high electron mobility transistors with inclined-gate-recess structure

被引：0
|
作者：
Aoi, Yuma [1 ]
Ohno, Yutaka [1 ]
Kishimoto, Shigeru [1 ]
Maezawa, Koichi [1 ]
Mizutani, Takashi [1 ,2 ]
机构：
[1] Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
[2] Institute for Advanced Research, Nagoya University, Nagoya 464-8601, Japan
来源：
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | 1600年 / 4 B卷 / 3368-3371期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Electric currents - Electric fields - Frequencies - Gallium nitride
引用
下载
收藏
相关论文
共 50 条
  • [31] Effects of the gate recess structure on the DC electrical behavior of 0.1-μm metamorphic high-electron-mobility transistors
    Oh, JH
    Son, MS
    Lee, BH
    Baek, YH
    Jang, HK
    Rhee, JK
    Hwang, IS
    Kim, SD
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 (04) : 1004 - 1008
  • [32] Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure
    Liu, An-Chen
    Huang, Yu-Wen
    Chen, Hsin-Chu
    Kuo, Hao-Chung
    MICROMACHINES, 2024, 15 (04)
  • [33] Depletion and enhancement mode InP high electron mobility transistors fabricated by a dry gate recess process
    Cheung, R
    Patrick, W
    Baechtold, W
    1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 598 - 601
  • [34] Gate orientation dependence of InGaAs/AlGaAs high electron mobility transistors formed by wet recess etching
    Ohshima, T
    Yoshida, M
    Shigemasa, R
    Tsunotani, M
    Kimura, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (9A): : 5052 - 5056
  • [35] Depletion and enhancement mode InP high electron mobility transistors fabricated by a dry gate recess process
    Cheung, R.
    Patrick, W.
    Baechtold, W.
    International Conference on Solid-State and Integrated Circuit Technology Proceedings, 1998, : 598 - 601
  • [36] Gate orientation dependence of InGaAs/AlGaAs high electron mobility transistors formed by wet recess etching
    Ohshima, Tomoyuki
    Yoshida, Masaaki
    Shigemasa, Ryoji
    Tsunotani, Masanori
    Kimura, Tamotsu
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (9 A): : 5052 - 5056
  • [37] Study on the charging current of surface traps in AlGaN/GaN high electron mobility transistors with a slot gate structure
    Cao, Qirui
    Wang, Jinyan
    Li, Mengjun
    Wang, Hongyue
    Tao, Qianqian
    Zhang, Bin
    Wu, Wengang
    APPLIED PHYSICS LETTERS, 2019, 115 (15)
  • [38] Effect of Gate-Recess Structure on Electron Transport in InP-Based High Electron Mobility Transistors Studied by Monte Carlo Simulations
    Endoh, Akira
    Watanabe, Issei
    Mimura, Takashi
    Matsui, Toshiaki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (10)
  • [39] Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors
    Lee, Finella
    Su, Liang-Yu
    Wang, Chih-Hao
    Wu, Yuh-Renn
    Huang, Jianjang
    IEEE ELECTRON DEVICE LETTERS, 2015, 36 (03) : 232 - 234
  • [40] Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors
    Kim, S.
    Ryou, J. -H.
    Dupuis, R. D.
    Kim, H.
    ELECTRONICS LETTERS, 2016, 52 (02) : 157 - 158
12345