Characteristics of boron in 4H-SiC layers produced by high-temperature techniques

被引：0
|
作者：
Kakanakova-Georgieva, A. [1 ]
Yakimova, R. [1 ]
Zhang, J. [1 ]
Storasta, L. [1 ]
Syväjärvi, M. [1 ]
Janzén, E. [1 ]
机构：
[1] Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
来源：
Materials Science Forum | 2002年 / 389-393卷 / 01期
关键词：
Boron - Cathodoluminescence - Characterization - Chemical vapor deposition - Epitaxial growth - Growth rate - Silicon carbide - Sublimation;
D O I：
10.4028/www.scientific.net/msf.389-393.259
中图分类号：
学科分类号：
摘要：
Characteristics of boron in as-grown 4H-SiC layers produced by fast epitaxy, i.e. sublimation and vertical hot-wall CVD, were studied by electrical and optical measurements. The boron-related contribution to the net acceptor concentration in the layers (as determined by CV on p-type residual doped sublimation epitaxy layers), the presence of deep boron centers (as indicated by DLTS) and boron-related green emission at - 505 nm (as observed by CL) are detected for various growth temperatures and C/Si ratios. The results are discussed in relation with the C vacancies in the lattice that may be affected by growth rate and input C/Si ratio in the CVD process. © 2002 Trans Tech Publications.
引用
收藏
页码：259 / 262
相关论文
共 50 条
  • [41] 500 °C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits
    Elahipanah, Hossein
    Kargarrazi, Saleh
    Salemi, Arash
    Ostling, Mikael
    Zetterling, Carl-Mikael
    IEEE ELECTRON DEVICE LETTERS, 2017, 38 (10) : 1429 - 1432
  • [42] High growth rate epitaxy of thick 4H-SiC layers
    Syvajarvi, M., 2000, Trans Tech Publ Ltd, Uetikon-Zuerich, Switzerland (338)
  • [43] Characterization of high-quality 4H-SiC epitaxial layers
    Kimoto, T
    Itoh, A
    Matsunami, H
    Sridhara, S
    Clemen, LL
    Devaty, RP
    Choyke, WJ
    Dalibor, T
    Peppermuller, C
    Pensl, G
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 393 - 396
  • [44] High growth rate epitaxy of thick 4H-SiC layers
    Syväjärvi, M
    Yakimova, R
    Jacobsson, H
    Linnarsson, MK
    Henry, A
    Janzén, E
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 165 - 168
  • [45] Comparison of measured and simulated characteristics of boron implanted 4H-SiC DIMOSFET
    Kim, S. C.
    Bahng, W.
    Kim, K. H.
    Kang, I. H.
    Kim, S. J.
    Kim, N. K.
    2006 25TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2006, : 211 - +
  • [46] Combination of JFET and MOSFET devices in 4H-SiC for high-temperature stable circuit operation
    Koo, SM
    Zetterling, CM
    Lee, HS
    Östling, M
    ELECTRONICS LETTERS, 2003, 39 (12) : 933 - 935
  • [47] High-temperature time-dependent dielectric breakdown of 4H-SiC MOS capacitors
    Hou, Xinlan
    Luo, Runding
    Liu, Qibin
    Chi, Yanqing
    Zhang, Jie
    Ma, Hongping
    Zhang, Qingchun
    Fan, Jiajie
    Case Studies in Thermal Engineering, 2024, 63
  • [48] 4H-SiC material for Hall effect and high-temperature sensors working in harsh environments
    Robert, JL
    Contreras, S
    Camassel, J
    Pernot, J
    Juillaguet, S
    Di Cioccio, L
    Billon, T
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1435 - 1438
  • [49] High-Temperature Characteristics of 3-kV 4H-SiC Reverse Blocking MOSFET for High-Performance Bidirectional Switch
    Mori, Seigo
    Aketa, Masatoshi
    Sakaguchi, Takui
    Nanen, Yuichiro
    Asahara, Hirokazu
    Nakamura, Takashi
    Kimoto, Tsunenobu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (10) : 4167 - 4174
  • [50] High temperature capability of high voltage 4H-SiC JBS
    Berthou, M.
    Godignon, P.
    Vergne, Bertrand
    Brosselard, Pierre
    HETEROSIC & WASMPE 2011, 2012, 711 : 124 - +
12345