500 °C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits

被引：19

作者：

Elahipanah, Hossein ^{[1
]}

Kargarrazi, Saleh ^{[1
]}

Salemi, Arash ^{[1
]}

Ostling, Mikael ^{[1
]}

Zetterling, Carl-Mikael ^{[1
]}

机构：

[1] KTH Royal Inst Technol, Sch Informat & Commun Technol, SE-16440 Kista, Sweden

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 10期

关键词：

4H-SiC; lateral BJT; high-current; monolithic integrated circuit; OPERATION;

D O I：

10.1109/LED.2017.2737558

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-current 4H-SiC lateral BJTs for hightemperature monolithic integrated circuits are fabricated. The BJTs have three different sizes and the designs are optimized in terms of emitter finger width and length and the device layout to have higher current density (J(C)), lower on-resistance (R-ON), and more uniform current distribution. A maximum current gain (beta) of >53 at significantly high current density was achieved for different sizes of SiC BJTs. The BJTs aremeasured fromroom temperature to 500 degrees C. An open-base breakdown voltage (V-CEO) of > 50 V is measured for the devices.

引用

页码：1429 / 1432

页数：4

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