500 °C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits

被引：19
|
作者：
Elahipanah, Hossein [1 ]
Kargarrazi, Saleh [1 ]
Salemi, Arash [1 ]
Ostling, Mikael [1 ]
Zetterling, Carl-Mikael [1 ]
机构：
[1] KTH Royal Inst Technol, Sch Informat & Commun Technol, SE-16440 Kista, Sweden
来源：
IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 10期
关键词：
4H-SiC; lateral BJT; high-current; monolithic integrated circuit; OPERATION;
D O I：
10.1109/LED.2017.2737558
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-current 4H-SiC lateral BJTs for hightemperature monolithic integrated circuits are fabricated. The BJTs have three different sizes and the designs are optimized in terms of emitter finger width and length and the device layout to have higher current density (J(C)), lower on-resistance (R-ON), and more uniform current distribution. A maximum current gain (beta) of >53 at significantly high current density was achieved for different sizes of SiC BJTs. The BJTs aremeasured fromroom temperature to 500 degrees C. An open-base breakdown voltage (V-CEO) of > 50 V is measured for the devices.
引用
收藏
页码：1429 / 1432
页数：4
相关论文
共 50 条
  • [41] A Comprehensive Study on the Geometrical Effects in High-Power 4H-SiC BJTs
    Salemi, Arash
    Elahipanah, Hossein
    Zetterling, Carl-Mikael
    Ostling, Mikael
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (03) : 882 - 887
  • [42] 4H-SiC n-MOSFET Logic Circuits for High Temperature Operation
    Le-Huu, Martin
    Grieb, Michael
    Schrey, Frederik F.
    Schmitt, Holger
    Haeublein, Volker
    Bauer, Anton J.
    Ryssel, Heiner
    Frey, Lothar
    SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 734 - +
  • [43] NMOS Logic Circuits using 4H-SiC MOSFETs for High Temperature Applications
    Le-Huu, M.
    Schrey, F. F.
    Grieb, M.
    Schmitt, H.
    Haeublein, V.
    Bauer, A. J.
    Ryssel, H.
    Frey, L.
    SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 1143 - +
  • [44] Characteristics of boron in 4H-SiC layers produced by high-temperature techniques
    Kakanakova-Georgieva, A
    Yakimova, R
    Zhang, J
    Storasta, L
    Syväjärvi, M
    Janzén, E
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 259 - 262
  • [45] High-temperature annealing effects on epitaxial TiN films on 4H-SiC
    Chen, Hsueh-, I
    Chen, Ching-Ho
    Chou, Yi
    Chen, Jhih-Syuan
    Hsu, Yu-Fu
    Kuo, Chih-Wei
    Ko, Cheng-Jung
    Chang, Li
    Chen, Chun-Hua
    SURFACE & COATINGS TECHNOLOGY, 2024, 483
  • [46] Effect of Surface Structure on Transformation of 4H-SiC by High-Temperature Annealing
    Kawada, Yasuyuki
    Tawara, Takeshi
    Nakamura, Shun-ichi
    Gotoh, Masahide
    Tawara, Tae
    Iwamuro, Noriyuki
    Akimoto, Katsuhiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (10) : 1013011 - 1013014
  • [47] Analysis of metallized 4H-SiC for high-temperature electric weapon applications
    Katulka, GL
    Kolodzey, J
    Olowolafe, J
    CONFERENCE RECORD OF THE 1998 TWENTY-THIRD INTERNATIONAL POWER MODULATOR SYMPOSIUM, 1998, : 114 - 118
  • [48] Characteristics of boron in 4H-SiC layers produced by high-temperature techniques
    Kakanakova-Georgieva, A.
    Yakimova, R.
    Zhang, J.
    Storasta, L.
    Syväjärvi, M.
    Janzén, E.
    Materials Science Forum, 2002, 389-393 (01) : 259 - 262
  • [49] High temperature, high current, p-channel UMOS 4H-SiC IGBT
    Singh, Ranbir
    Ryu, Sei-Hyung
    Palmour, John W.
    Annual Device Research Conference Digest, 1999, : 46 - 47
  • [50] 4H-SiC BJT characterization at high current high voltage
    Gao, Yan
    Huang, Alex Q.
    Xu, Xiaojun
    Du, Zhong
    Agarwal, Anant K.
    Krishnaswami, Sumi
    Ryu, Sei-Hyung
    2006 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-7, 2006, : 2932 - +
12345