Characteristics of boron in 4H-SiC layers produced by high-temperature techniques

被引：0
|
作者：
Kakanakova-Georgieva, A. [1 ]
Yakimova, R. [1 ]
Zhang, J. [1 ]
Storasta, L. [1 ]
Syväjärvi, M. [1 ]
Janzén, E. [1 ]
机构：
[1] Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
来源：
Materials Science Forum | 2002年 / 389-393卷 / 01期
关键词：
Boron - Cathodoluminescence - Characterization - Chemical vapor deposition - Epitaxial growth - Growth rate - Silicon carbide - Sublimation;
D O I：
10.4028/www.scientific.net/msf.389-393.259
中图分类号：
学科分类号：
摘要：
Characteristics of boron in as-grown 4H-SiC layers produced by fast epitaxy, i.e. sublimation and vertical hot-wall CVD, were studied by electrical and optical measurements. The boron-related contribution to the net acceptor concentration in the layers (as determined by CV on p-type residual doped sublimation epitaxy layers), the presence of deep boron centers (as indicated by DLTS) and boron-related green emission at - 505 nm (as observed by CL) are detected for various growth temperatures and C/Si ratios. The results are discussed in relation with the C vacancies in the lattice that may be affected by growth rate and input C/Si ratio in the CVD process. © 2002 Trans Tech Publications.
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页码：259 / 262
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