Study of the dielectric constant of polyurethane/polybutyl-methacrylate interpenetrating polymer networks using metal-insulator-semiconductor structure

被引：0
|
作者：
Qian, XM
Qin, DQ
Wang, JY [1 ]
Tang, J
Li, F
Bai, YB
Li, TJ
Tang, XY
机构：
[1] Jilin Univ, Dept Chem, Changchun 130023, Peoples R China
[2] Peking Univ, Coll Chem & Mol Engn, Beijing 100871, Peoples R China
来源：
JOURNAL OF APPLIED POLYMER SCIENCE | 2000年 / 75卷 / 05期
关键词：
dielectric constant; polyurethane/polybutyl-methacrylate interpenetrating polymer networks; capacitance-voltage measurement; metal-insulator-semiconductor structure;
D O I：
10.1002/(SICI)1097-4628(20000131)75:5<721::AID-APP15>3.0.CO;2-9
中图分类号：
O63 [高分子化学（高聚物）];
学科分类号：
070305 ; 080501 ; 081704 ;
摘要：
Polyurethane/polybutyl-methacrylate interpenetrating polymer networks (IPNs) film was formed on n-Si substrate by the dropping technique. When aluminum (Al) was vacuum deposited on the top of the film, the Al/IPNs/n-Si (metal-insulator-semiconductor) structure was fabricated successfully. With the aid of the high-frequency capacitance-voltage (C-V) characteristics at room temperature, the dielectric constant of IPNs was obtained. In the C-V curves, an increased hysteresis at high sweep voltage and a plateau in the depletion region were observed. This plateau indicates that the unsaturated bonds beyond IPNs film could act as electron well at the applied voltage above 10 V. (C) 2000 John Wiley & Sons, Inc.
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收藏
页码：721 / 727
页数：7
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