Implementation principles for the procedure of extraction of convective currents in a dielectric and emission currents at semiconductor-dielectric interface from the dynamic current-voltage characteristics of a metal-insulator-semiconductor structure: A method for checking variations in interface states in the course of an experiment

The possibility of extracting convective currents in a dielectric (I-d) and emission currents at a semiconductor-dielectric interface (I-e) from dynamic current-voltage (I-V) characteristics of a metal-insulator-semiconductor (MIS) structure is considered. A method for controlling variations in interface states is proposed based on synchronous measurements of the high- and low-frequency capacitance-voltage (C-V) of the structure under study.