High electrical activation of aluminium and nitrogen implanted in 6H-SiC at room temperature by RF annealing

被引：0
|
作者：
Lazar, M. [1 ]
Ottaviani, L. [1 ]
Locatelli, M.L. [1 ]
Raynaud, C. [1 ]
Planson, D. [1 ]
Morvan, E. [2 ]
Godignon, P. [2 ]
Skorupa, W. [3 ]
Chante, J.P. [1 ]
机构：
[1] CEGELY (UMR CNRS No5005), Bât. 401, INSA de Lyon, 20 avenue A. Einstein, FR-69621 Villeurbanne Cedex, France
[2] Ctro. Nac. de Microelectronica, Campus UAB, ES-08193 Bellaterra, Spain
[3] Forschungszentrum Rossendorf e.V., PO Box 510119, DE-01314 Dresden, Germany
来源：
Materials Science Forum | 2001年 / 353-356卷
关键词：
D O I：
10.4028/www.scientific.net/msf.353-356.571
中图分类号：
学科分类号：
摘要：
8
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页码：571 / 574
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