Electrical properties of high-dose nitrogen-implanted and rapid thermal annealed 6H-SiC

被引：6
|
作者：
Abe, K [1 ]
Eryu, O [1 ]
Kogi, O [1 ]
Nakashima, K [1 ]
机构：
[1] Nagoya Inst Technol, Dept Elect & Comp Engn, Nagoya, Aichi 4668555, Japan
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2003年 / 206卷
关键词：
SiC; ion-implantation; rapid thermal annealing; CAICISS; SIMS;
D O I：
10.1016/S0168-583X(03)00902-9
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The annealing time dependence of surface morphologies, crystallinity, and electrical characteristics for the high-dose nitrogen-implanted 6H-SiC has been investigated. Rapid thermal annealing (RTA) was performed at the temperature ranging from 1600 to 1850 degreesC for 20 s. In comparison with conventional furnace annealed (FA) samples (1550-1650 degreesC, 180 s in argon), the RTA samples had smoother surfaces and better crystallinity. While no reduction in the thickness of the implanted layer and no redistribution of implanted nitrogen atoms were observed in the RTA samples, the thickness of the implanted layer was reduced by FA. The sheet resistance and electron concentration of the RTA sample at 1750 degreesC were comparable to those of the FA sample at 1550 degreesC. We will discuss the difference between the RTA and the FA samples. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：960 / 964
页数：5
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