Electrical properties of high-dose nitrogen-implanted and rapid thermal annealed 6H-SiC

被引：6
|
作者：
Abe, K [1 ]
Eryu, O [1 ]
Kogi, O [1 ]
Nakashima, K [1 ]
机构：
[1] Nagoya Inst Technol, Dept Elect & Comp Engn, Nagoya, Aichi 4668555, Japan
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2003年 / 206卷
关键词：
SiC; ion-implantation; rapid thermal annealing; CAICISS; SIMS;
D O I：
10.1016/S0168-583X(03)00902-9
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The annealing time dependence of surface morphologies, crystallinity, and electrical characteristics for the high-dose nitrogen-implanted 6H-SiC has been investigated. Rapid thermal annealing (RTA) was performed at the temperature ranging from 1600 to 1850 degreesC for 20 s. In comparison with conventional furnace annealed (FA) samples (1550-1650 degreesC, 180 s in argon), the RTA samples had smoother surfaces and better crystallinity. While no reduction in the thickness of the implanted layer and no redistribution of implanted nitrogen atoms were observed in the RTA samples, the thickness of the implanted layer was reduced by FA. The sheet resistance and electron concentration of the RTA sample at 1750 degreesC were comparable to those of the FA sample at 1550 degreesC. We will discuss the difference between the RTA and the FA samples. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：960 / 964
页数：5
相关论文
共 50 条
  • [21] Characterization of electrical properties in high-dose implanted and post-implantation-annealed 4H-SiC wafers using infrared reflectance spectroscopy
    Narita, K
    Hijikata, Y
    Yaguchi, H
    Yoshida, S
    Senzaki, J
    Nakashima, S
    SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 905 - 908
  • [22] Surface properties and electrical characteristics of rapid thermal annealed 4H-SiC
    Bauer, AJ
    Rambach, M
    Frey, L
    Weiss, R
    Rupp, R
    Friedrichs, P
    Schörner, R
    Peters, D
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 609 - 612
  • [23] Structural and electrical characteristics of oxygen-implanted 6H-SiC
    Wang, LW
    Huang, JP
    Duo, XZ
    Song, ZT
    Lin, CL
    Zetterling, CM
    Östling, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 169 : 1 - 5
  • [24] Optical and structural properties of 6H-SiC implanted with silicon as a function of implantation dose and temperature
    Héliou, R
    Brebner, JL
    Roorda, S
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 175 : 268 - 273
  • [25] THERMAL IONIZATION ON NONEQUIVALENT NITROGEN STATES IN 6H-SIC
    ALEKSEENKO, MV
    ZABRODSKII, AG
    TIMOFEEV, MP
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1985, 11 (16): : 1018 - 1023
  • [26] Nitrogen implanted high voltage, planar, 6H-SiC N+-P junction diodes
    Alok, D
    Baliga, BJ
    ISPSD '96 - 8TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, PROCEEDINGS, 1996, : 107 - 110
  • [27] Epitaxial aluminum carbide formation in 6H-SiC by high-dose Al+ implantation
    Stoemenos, J
    Pécz, B
    Heera, V
    APPLIED PHYSICS LETTERS, 1999, 74 (18) : 2602 - 2604
  • [28] On the study of microstructure of annealed C+ and H2+ Co-implanted 6H-SiC
    Ye, Chao
    Ran, Guang
    Zhou, Wei
    Feng, Qijie
    Huang, Jingchi
    Li, Ning
    PROGRESS IN NUCLEAR ENERGY, 2020, 118
  • [29] Contribution of iron silicide nanoparticles to the magnetic behavior of annealed Fe-implanted 6H-SiC
    Diallo, M. L.
    Fnidiki, A.
    Viret, M.
    Drouet, M.
    Eyidi, D.
    Declemy, A.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 1-2, 2015, 12 (1-2): : 60 - 64
  • [30] Charge trapping in nitrogen implanted 6H-SiC N+P junctions
    Ramungul, N
    Chow, TP
    Brown, DM
    Michon, G
    Downey, E
    Kretchmer, J
    ISPSD '97: 1997 IEEE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, 1997, : 161 - 164
12345