Room temperature physical characterization of implanted 4H-and 6H-SiC

被引：1

作者：

Zekentes, Konstantinos ^{[1
]}

Tsagaraki, Katerina ^{[1
]}

Androulidaki, Maria ^{[1
]}

Kayambaki, Maria ^{[1
]}

Stavrinidis, Antonis ^{[1
]}

Peyre, Herve ^{[2
]}

Camassel, Jean ^{[2
]}

机构：

[1] FORTH, MRG IESL, POB 1385, Iraklion, Greece

[2] Univ Montpellier 2, GES, F-34095 Montpellier, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

Ion implantation; X-Ray Diffraction; Room temperature photoluminescence; Electrochemical; C-V; mercury-probe;

D O I：

10.4028/www.scientific.net/MSF.717-720.589

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The purpose of the present study is to determine the appropriate physical characterization methods for evaluating material quality during the fabrication steps of a 4H-SiC Static Induction Transistor (SIT). The most important fabrication step, in terms of material quality, is the gate implantation and post-implantation annealing. Separate "witness" samples from the processed sample have been used for evaluating implantation and post-implantation annealing. Secondary Ion Mass Spectroscopy (SIMS), optical transmission, room-temperature photoluminescence (RTPL), High Resolution X-Ray diffraction (HRXRD) and C-V measurements with Hg-probe and electrochemical (ECV) cells have been employed in the frame of the present study. HRXRD and ECV have been proved particularly suitable for characterizing the implanted layers.

引用

页码：589 / +

页数：2

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