Annealing of silver implanted 6H-SiC and the diffusion of the silver

被引：28
|
作者：
Hlatshwayo, T. T. [1 ]
Malherbe, J. B. [1 ]
van der Berg, N. G. [1 ]
Prinsloo, L. C. [1 ]
Botha, A. J. [2 ]
Wendler, E. [3 ]
Wesch, W. [3 ]
机构：
[1] Univ Pretoria, Dept Phys, Pretoria, South Africa
[2] Univ Pretoria, Lab Microscopy & Microanal, ZA-0002 Pretoria, South Africa
[3] Univ Jena, Inst Festkorperphys, D-6900 Jena, Germany
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2012年 / 274卷
关键词：
RBS; Channeling; SEM; Implantation; Diffusion; Ag; TRISO fuel particle; SILICON; BEHAVIOR; RELEASE;
D O I：
10.1016/j.nimb.2011.12.006
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Annealing and diffusion behavior of implanted silver in 6H-SiC has been investigated using Rutherford backscattering spectroscopy (RBS), channeling, Raman spectroscopy and scanning electron microscopy (SEM) techniques. Silver (Ag-109(+)) ions with an energy of 360 keV were implanted in SiC to a fluence of 2 x 10(16) cm(-2) at room temperature (23 degrees C), 350 and 600 degrees C. After implantation the samples were annealed at temperatures up to 1400 degrees C. The results revealed that implantation at room temperature created an amorphous layer of about 270 nm from the surface while implantation at 350 and 600 degrees C retained a crystalline structure with more damage created for 350 degrees C implantation compared to 600 degrees C. Diffusion of implanted Ag accompanied by loss from the surface started at 1300 degrees C in the amorphous SiC with no diffusion observed in the crystalline SiC. A new model explaining this diffusion of silver accompanied silver loss is presented. (C) 2011 Elsevier B.V. All rights reserved.
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收藏
页码：120 / 125
页数：6
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