Effects of temperature on the morphology and structure of AlN films deposited by reactive magnetron sputtering

被引:0
|
作者
Zheng, Xiao-Juan [1 ]
Wang, Juan [1 ]
Li, Shan-Feng [1 ]
Zhang, Qing-Yu [1 ]
机构
[1] Lab. of Mat. Modification, Dalian Univ. of Technol., Dalian 116024, China
来源
关键词
Silicon substrates - Surface morphology - Temperature effects;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:93 / 96
相关论文
共 50 条
  • [31] Study on the adhesion of AlN thin films co-deposited by dual targets reactive magnetron sputtering
    Zhu, Jia-Jun
    Zhou, Ling-Ping
    Liu, Xin-Sheng
    Peng, Kun
    Li, De-Yi
    Li, Shao-Lu
    Rengong Jingti Xuebao/Journal of Synthetic Crystals, 2010, 39 (01): : 77 - 81
  • [32] AlN films deposited by dc magnetron sputtering and high power impulse magnetron sputtering for SAW applications
    Aissa, K. Ait
    Achour, A.
    Elmazria, O.
    Simon, Q.
    Elhosni, M.
    Boulet, P.
    Robert, S.
    Djouadi, M. A.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 48 (14)
  • [33] Frequency effects on the dielectric properties of AlN film deposited by radio frequency reactive magnetron sputtering
    Song, Xiufeng
    Fu, Renli
    He, Hong
    MICROELECTRONIC ENGINEERING, 2009, 86 (11) : 2217 - 2221
  • [34] Effect of Oxygen Impurities on Thermal Diffusivity of AlN Thin Films Deposited by Reactive RF Magnetron Sputtering
    Yagi, Takashi
    Oka, Nobuto
    Okabe, Takashi
    Taketoshi, Naoyuki
    Baba, Tetsuya
    Shigesato, Yuzo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (11)
  • [35] Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering
    Valcheva, E.
    Birch, J.
    Persson, P. O. A.
    Tungasmita, S.
    Hultman, L.
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (12)
  • [36] Epitaxial growth of ZnO thin films on AlN substrates deposited at low temperature by magnetron sputtering
    Rahmane, S.
    Abdallah, B.
    Soussou, A.
    Gautron, E.
    Jouan, P. -Y.
    Le Brizoual, L.
    Barreau, N.
    Soltani, A.
    Djouadi, M. A.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (07): : 1604 - 1608
  • [37] STRUCTURAL PROPERTIES OF AlN FILMS WITH OXYGEN CONTENT DEPOSITED BY REACTIVE MAGNETRON SPUTTERING: XRD AND XPS CHARACTERIZATION
    Garcia-Mendez, Manuel
    Morales-Rodriguez, Santos
    Shaji, Sadasivan
    Krishnan, Bindu
    Bartolo-Perez, Pascual
    SURFACE REVIEW AND LETTERS, 2011, 18 (1-2) : 23 - 31
  • [38] Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering
    Valcheva, E.
    Birch, J.
    Persson, P.O.A.
    Tungasmita, S.
    Hultman, L.
    Journal of Applied Physics, 2006, 100 (12):
  • [39] Highly textured hexagonal AlN films deposited at low temperature by reactive cathodic sputtering
    Laboratoire de Cristallographie, CNRS, BP 166, 38042 Cedex 9, Grenoble, France
    不详
    Mater Sci Eng B Solid State Adv Technol, 1-3 (88-93):
  • [40] Thermal conductivity of AlN thin films deposited by RF magnetron sputtering
    Park, Min-Ho
    Kim, Sang-Ho
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2012, 15 (01) : 6 - 10