IDDQ testing for deep-submicron ICs: Challenges and solutions

被引：1
|
作者：
Chen, Zhanping
Wei, Liqiong
Keshavarzi, Ali
Roy, Kaushik
机构：
[1] Purdue University, United States
[2] Intel, MS RA1-305, 5200 NE Elam Young Parkway, Hillsboro, OR 97124, United States
来源：
IEEE Design and Test of Computers | 2002年 / 19卷 / 02期
关键词：
Drain induced barrier lowering - Gate induced drain leakage - Hot carrier injection - Quiescent power supply current - Vector control technique;
D O I：
10.1109/54.990439
中图分类号：
学科分类号：
摘要：
(Edited Abstract)
引用
收藏
页码：24 / 33
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