Absorption bands associated with conduction bands and impurity states in 4H and 6H SiC

被引:1
|
作者
Sridhara, S.G. [1 ]
Bai, S. [1 ]
Shigiltchoff, O. [1 ]
Devaty, R.P. [1 ]
Choyke, W.J. [1 ]
机构
[1] Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, United States
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Absorption bands associated with conduction bands and impurity states in 4H and 6H SiC
    Sridhara, SG
    Bai, S
    Shigiltchoff, O
    Devaty, RP
    Choyke, WJ
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 551 - 554
  • [2] IMPURITY ABSORPTION OF INFRARED RADIATION IN SIC(6H)
    VAKULENKO, OV
    SHUTOV, BM
    GOVOROVA, OA
    FIZIKA TVERDOGO TELA, 1972, 14 (01): : 291 - +
  • [3] The acceptor level for vanadium in 4H and 6H SiC
    Zvanut, ME
    Lee, W
    Mitchel, WC
    Mitchell, WD
    Landis, G
    PHYSICA B-CONDENSED MATTER, 2006, 376 : 346 - 349
  • [4] Neutral silicon vacancy in 6H and 4H SiC
    Sorman, E.
    Chen, W.M.
    Son, N.T.
    Hallin, C.
    Lindstrom, J.L.
    Monemar, B.
    Janzen, E.
    Materials Science Forum, 1998, 264-268 (pt 1): : 473 - 476
  • [5] Homoepitaxy 6H and 4H SiC on nonplanar substrates
    Nordell, N
    Karlsson, S
    Konstantinov, AO
    APPLIED PHYSICS LETTERS, 1998, 72 (02) : 197 - 199
  • [6] The neutral silicon vacancy in 6H and 4H SiC
    Sorman, E
    Chen, WM
    Son, NT
    Hallin, C
    Lindstrom, JL
    Monemar, B
    Janzen, E
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 473 - 476
  • [7] The carbon vacancy pair in 4H and 6H SiC
    Son, NT
    Hai, PN
    Shuja, A
    Chen, WM
    Lindström, JL
    Monemar, B
    Janzén, E
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 821 - 824
  • [8] Ellipsometric studies of bulk 4H and 6H SiC substrates
    Zollner, S
    Hilifker, JN
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1998, 166 (01): : R9 - R10
  • [9] Carrier Removal in Electron Irradiated 4H and 6H SiC
    Mikelsen, Mads
    Grossner, Ulrike
    Bleka, Jan H.
    Monakhov, Edouard V.
    Svensson, Bengt G.
    Yakirnova, Rositza
    Henry, Anne
    Janzen, Erik
    Lebedev, AlexanderA.
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 425 - +
  • [10] Silicon vacancy related defect in 4H and 6H SiC
    Sörman, E
    Son, NT
    Chen, WM
    Kordina, O
    Hallin, C
    Janzén, E
    PHYSICAL REVIEW B, 2000, 61 (04): : 2613 - 2620