Absorption bands associated with conduction bands and impurity states in 4H and 6H SiC

被引：23

作者：

Sridhara, SG ^{[1
]}

Bai, S ^{[1
]}

Shigiltchoff, O ^{[1
]}

Devaty, RP ^{[1
]}

Choyke, WJ ^{[1
]}

机构：

[1] Univ Pittsburgh, Dept Phys & Astron, Pittsburgh, PA 15260 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

absorption; band structure; conduction bands; donors; nitrogen;

D O I：

10.4028/www.scientific.net/MSF.338-342.551

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Absorption spectra of n-type 4H and 6H SiC are presented and tentatively interpreted. The absorption bands are assigned to transitions involving the lowest conduction band, higher conduction bands, nitrogen donor levels, and/or possible donor induced resonances.

引用

页码：551 / 554

页数：4

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