Absorption bands associated with conduction bands and impurity states in 4H and 6H SiC

被引：1
|
作者：
Sridhara, S.G. [1 ]
Bai, S. [1 ]
Shigiltchoff, O. [1 ]
Devaty, R.P. [1 ]
Choyke, W.J. [1 ]
机构：
[1] Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, United States
来源：
| 2000年 / Trans Tech Publ Ltd, Uetikon-Zuerich, Switzerland卷 / 338期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] HF chemical etching of SiO2 on 4H and 6H SiC
    Johnson, MB
    Zvanut, ME
    Richardson, O
    JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (03) : 368 - 371
  • [42] IMPURITY ABSORPTION OF ELECTROMAGNETIC RADIATION IN 6H ALPHA-SIC CRYSTALS
    VAKULENK.OV
    GOVOROVA, OA
    SOVIET PHYSICS SOLID STATE,USSR, 1971, 13 (02): : 520 - +
  • [43] STRUCTURAL AND ELECTRONIC-PROPERTIES OF CUBIC, 2H, 4H, AND 6H SIC
    PARK, CH
    CHEONG, BH
    LEE, KH
    CHANG, KJ
    PHYSICAL REVIEW B, 1994, 49 (07) : 4485 - 4493
  • [44] Λ6H Modeled as Λ4H + n + n
    Gibson, B. F.
    Afnan, I. R.
    FEW-BODY SYSTEMS, 2014, 55 (8-10) : 913 - 916
  • [45] Nitrogen donor levels and conduction band edge structures in 3C, 2H, 4H and 6H SiC
    Srichaikul, P
    Chen, AB
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 285 - 288
  • [46] BVCEO versus BVCBO for 4H and 6H Polytype SiC Bipolar Junction Transistors
    Balachandran, S
    Chow, TP
    Agarwal, A
    Scozzie, S
    Jones, KA
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 893 - 896
  • [47] Thermal expansion of 4H and 6H SiC from 5 K to 340 K
    Neumeier, J. J.
    Shvyd'ko, Yu. V.
    Haskel, D.
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2024, 187
  • [48] Optical Identification of Mo Related Deep Level Defect in 4H and 6H SiC
    Gallstrom, Andreas
    Magnusson, Bjorn
    Janzen, Erik
    SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 405 - 408
  • [49] Photoluminescence and DLTS measurements of 15 MeV erbium implanted 6H and 4H SiC
    Shishkin, Y.
    Choyke, W.J.
    Devaty, R.P.
    Achtziger, N.
    Opfermann, Th.
    Witthuhn, W.
    Materials Science Forum, 2000, 338
  • [50] Optical properties of the niobium centre in 4H, 6H, and 15R SiC
    Ivanov, Ivan G.
    Gallstrom, Andreas
    Leone, Stefano
    Kordina, Olof
    Son, N. T.
    Henry, Anne
    Ivady, Viktor
    Gali, Adam
    Janzen, Erik
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 405 - +
12345