Absorption bands associated with conduction bands and impurity states in 4H and 6H SiC

被引：1
|
作者：
Sridhara, S.G. [1 ]
Bai, S. [1 ]
Shigiltchoff, O. [1 ]
Devaty, R.P. [1 ]
Choyke, W.J. [1 ]
机构：
[1] Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, United States
来源：
| 2000年 / Trans Tech Publ Ltd, Uetikon-Zuerich, Switzerland卷 / 338期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Characterization of electrically active deep level defects in 4H and 6H SiC
    Doyle, JP
    Aboelfotoh, MO
    Svensson, BG
    Schoner, A
    Nordell, N
    DIAMOND AND RELATED MATERIALS, 1997, 6 (10) : 1388 - 1391
  • [32] 4H(6H)-SiC表面重构的STM/STS研究
    卢慧
    王昊霖
    杨德仁
    皮孝东
    真空科学与技术学报, 2023, 43 (03) : 191 - 201
  • [33] HF chemical etching of SiO2 on 4H and 6H SiC
    M. B. Johnson
    M. E. Zvanut
    Otha Richardson
    Journal of Electronic Materials, 2000, 29 : 368 - 371
  • [34] Diffusion of boron in 6H and 4H SiC coimplanted with boron and nitrogen ions
    Usov, IO
    Suvorova, AA
    Kudriavtsev, YA
    Suvorov, AV
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (09) : 4960 - 4964
  • [35] Diffusion of boron in 6H and 4H SiC coimplanted with boron and nitrogen ions
    Usov, I.O.
    Suvorova, A.A.
    Kudriavtsev, Y.A.
    Suvorov, A.V.
    Journal of Applied Physics, 2004, 96 (09): : 4960 - 4964
  • [36] Growth and characterization of large diameter 6H and 4H SiC single crystals
    Gupta, A.
    Semenas, E.
    Emorhokpor, E.
    Chen, J.
    Zwieback, I.
    Souzis, A.
    Anderson, T.
    Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 43 - 46
  • [37] Deep centres appearing in 6H and 4H SiC after proton irradiation
    Lebedev, AA
    Davydov, DV
    Strel'chuk, AM
    Kuznetsov, AN
    Bogdanova, EV
    Kozlovski, VV
    Savkina, NS
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 973 - 976
  • [38] Photoluminescence and Zeeman effect in chromium-doped 4H and 6H SiC
    Son, NT
    Ellison, A
    Magnusson, B
    MacMillan, MF
    Chen, WM
    Monemar, B
    Janzén, E
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) : 4348 - 4353
  • [39] Annealing effect on surfaces of 4H(6H)-SiC(0001)Si face
    Tsukamoto, T
    Hirai, M
    Kusaka, M
    Iwami, M
    Ozawa, T
    Nagamura, T
    Nakata, T
    APPLIED SURFACE SCIENCE, 1997, 113 : 467 - 471
  • [40] Nitrogen incorporation kinetics during the sublimation growth of 6H and 4H SiC
    Onoue, K
    Nishikawa, T
    Katsuno, M
    Ohtani, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (4A): : 2240 - 2243
12345