Analysis of postirradiation annealing of n-channel power vertical double-diffused metal-oxide-semiconductor transistors

被引：0
|
作者：
机构：
来源：
| 1600年 / American Inst of Physics, Woodbury, NY, USA卷 / 87期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Effect of tensile stress on the various components of the off current of n-channel metal-oxide-semiconductor transistors
    Yang, Peizhen
    Lau, W. S.
    Ho, V.
    Loh, C. H.
    Siah, S. Y.
    Chan, L.
    APPLIED PHYSICS LETTERS, 2007, 91 (07)
  • [32] ANISOTROPY OF PIEZORESISTANCE IN N-CHANNEL INVERSION-LAYERS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS ON (001)SI
    MARUYAMA, T
    ZAIMA, S
    KOIDE, Y
    KANDA, Y
    YASUDA, Y
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (11) : 5687 - 5691
  • [33] HIGH-VOLTAGE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY
    ABBOTT, RS
    ELLUL, JP
    HADAWAY, RA
    WHITE, JJ
    CANADIAN JOURNAL OF PHYSICS, 1985, 63 (06) : 897 - 900
  • [34] Dual-Stepped Gate Vertical Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistor with Enhanced Device Performance
    Sidar, Devesh Singh
    Parmar, Onika
    Mishra, Zeesha
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2024, 221 (04):
  • [35] Modelling of kinetics of creation and passivation of interface traps in metal-oxide-semiconductor transistors during postirradiation annealing
    Ristic, GS
    Pejovic, MM
    Jaksic, AB
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (06) : 2994 - 3000
  • [36] Observation of double peak in the substrate current versus gate voltage characteristics of n-channel metal-oxide-semiconductor field effect transistors
    Anil, KG
    Eisele, I
    Mahapatra, S
    APPLIED PHYSICS LETTERS, 2001, 78 (15) : 2238 - 2240
  • [37] 4H-SiC layer with multiple trenches in lateral double-diffused metal-oxide-semiconductor transistors for high temperature and high voltage applications
    Sohrabi-Movahed, Amir
    Orouji, Ali Asghar
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2023, 41 (06):
  • [38] Investigation of impact ionization in strained-Si n-channel metal-oxide-semiconductor field-effect transistors
    Kang, Ting-Kuo
    Huang, Po-Chin
    Sa, Yu-Huan
    Wu, San-Lein
    Chang, Shoou-Jinn
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 2664 - 2667
  • [39] Novel Bulk Silicon Lateral Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistors Using Step Thickness Technology in Drift Region
    Huang, Shi
    Guo, Yufeng
    Yao, Jiafei
    Hua, Tingting
    Zhang, Jun
    Zhang, Changchun
    Ji, Xincun
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (12)
  • [40] Novel bulk silicon lateral double-diffused metal-oxide-semiconductor field-effect transistors using step thickness technology in drift region
    2013, Japan Society of Applied Physics (52)
12345