Analysis of postirradiation annealing of n-channel power vertical double-diffused metal-oxide-semiconductor transistors

被引：0
|
作者：
机构：
来源：
| 1600年 / American Inst of Physics, Woodbury, NY, USA卷 / 87期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] A novel planar vertical double-diffused metal-oxide-semiconductor field-effect transistor with inhomogeneous floating islands
    Ren Min
    Li Ze-Hong
    Liu Xiao-Long
    Xie Jia-Xiong
    Deng Guang-Min
    Zhang Bo
    CHINESE PHYSICS B, 2011, 20 (12)
  • [22] N-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS FABRICATED IN A SILICON FILM BONDED ONTO SAPPHIRE
    WANG, JH
    JIN, MS
    OZGUZ, VH
    LEE, SH
    APPLIED PHYSICS LETTERS, 1994, 64 (06) : 724 - 726
  • [23] NbO as gate electrode for n-channel metal-oxide-semiconductor field-effect-transistors
    Gao, W
    Conley, JF
    Ono, Y
    APPLIED PHYSICS LETTERS, 2004, 84 (23) : 4666 - 4668
  • [24] N-channel metal-oxide-semiconductor transistors fabricated in a silicon film bonded onto sapphire
    1600, (64):
  • [25] Analysis of Hot Carrier Degradation of Lateral Double-Diffused Metal-Oxide-Semiconductor under Gate Pulse Stress
    Furuya, Keiichi
    Nitta, Tetsuya
    Katayama, Toshiharu
    Hatasako, Kenichi
    Kuroi, Takashi
    Maegawa, Shigeto
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)
  • [26] Fabricating high performance n-channel lateral double diffused metal-oxide-semiconductor transistors utilizing the shallow trench isolation as a salicide blocking mask of the drift region
    Na, Kee-Yeol
    Kim, Yeong-Seuk
    CURRENT APPLIED PHYSICS, 2009, 9 (01) : 9 - 12
  • [27] Edge transistor elimination in oxide trench isolated N-channel metal-oxide-semiconductor field effect transistors
    Yang, JN
    Denton, JP
    Neudeck, GW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (02): : 327 - 332
  • [28] New folding lateral double-diffused metal-oxide-semiconductor field effect transistor with the step oxide layer
    Duan Bao-Xing
    Li Chun-Lai
    Ma Jian-Chong
    Yuan Song
    Yang Yin-Tang
    ACTA PHYSICA SINICA, 2015, 64 (06)
  • [29] SELECTIVELY SILICIDED VERTICAL POWER DOUBLE-DIFFUSED METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FOR HIGH-FREQUENCY POWER SWITCHING APPLICATIONS
    SHENAI, K
    PIACENTE, PA
    KORMAN, CS
    BALIGA, BJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 1740 - 1745
  • [30] Impacts of SiN deposition parameters on n-channel metal-oxide-semiconductor field-effect-transistors
    Lu, Ching-Sen
    Lin, Horng-Chih
    Huang, Tiao-Yuan
    SOLID-STATE ELECTRONICS, 2008, 52 (10) : 1584 - 1588
12345