Comparison of physical and electrical properties of GZO/ZnO buffer layer and GZO as source and drain electrodes of α-IGZO thin-film transistors

被引：0
|
作者：
机构：
[1] Wu, Jia-Ling
[2] Lin, Han-Yu
[3] Su, Bo-Yuan
[4] Chen, Yu-Cheng
[5] 1,Chu, Sheng-Yuan
[6] Liu, Ssu-Yin
[7] Chang, Chia-Chiang
[8] Wu, Chin-Jyi
来源：
Chu, S.-Y. (chusy@mail.ncku.edu.tw) | 1600年 / Elsevier Ltd卷 / 592期
关键词：
This work was supported by the National Science Council of Taiwan under Grants NSC 97-2221-E-006-241-MY3; NSC; 100-3113-E-006-015; 100-2120-M-006-001; and NSC 101-3113-E-006-014 and by the Display Technology Center; Industrial Technology Research Institute of Taiwan; under Grant 100-C-073;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors
    Seo, J. H.
    Park, D. S.
    Cho, S. W.
    Kim, C. Y.
    Jang, W. C.
    Whang, C. N.
    Yoo, K. -H.
    Chang, G. S.
    Pedersen, T.
    Moewes, A.
    Chae, K. H.
    Cho, S. J.
    APPLIED PHYSICS LETTERS, 2006, 89 (16)
  • [32] Structural, Electrical, and Optical Properties of ZnO Film Used as Buffer Layer for CIGS Thin-Film Solar Cell
    Choi, Eun Chang
    Cha, Ji-Hyun
    Jung, Duk-Young
    Hong, Byungyou
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 16 (05) : 5087 - 5091
  • [33] Enhancement in Performance and Reliability of Transparent IGZO Thin-Film Transistors by ITO/Ti Stacked Source/Drain Contacts
    Li, Y. B.
    Chen, T. P.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2023, 12 (09)
  • [34] A comparison of Ga:ZnO and Ga:ZnO/Ag/Ga:ZnO source/drain electrodes for In-Ga-Zn-O thin film transistors
    Choi, Kwang-Hyuk
    Jeon, Sanghun
    Kim, Han-Ki
    MATERIALS RESEARCH BULLETIN, 2012, 47 (10) : 2915 - 2918
  • [35] Analysis of IGZO Thin-Film Transistors by XPS and Relation With Electrical Characteristics
    Thi Thu Thuy Nguyen
    Renault, Olivier
    Aventurier, Bernard
    Rodriguez, Guillaume
    Barnes, Jean Paul
    Templier, Francois
    JOURNAL OF DISPLAY TECHNOLOGY, 2013, 9 (09): : 770 - 774
  • [36] Modelling and numerical analysis for wavy edge in printed source and drain electrodes of thin-film transistors
    Jeong, J.
    Hong, Y.
    Baek, S. H.
    Tutt, L.
    Burburry, M.
    ELECTRONICS LETTERS, 2008, 44 (10) : 616 - 617
  • [37] Enhancement of Electrical Stability in IGZO Thin-Film Transistors Inserted with an IZO Layer Grown by Atomic Layer Deposition
    Ding, Xingwei
    Li, Sheng
    Song, Jiantao
    Zhang, Jianhua
    Jiang, Xueyin
    Zhang, Zhilin
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2017, 12 (03) : 273 - 277
  • [38] Pentacene-based thin-film transistors with multiwalled carbon nanotube source and drain electrodes
    Chang, Chia-Hao
    Chien, Chao-Hsin
    Yang, Jung-Yen
    APPLIED PHYSICS LETTERS, 2007, 91 (08)
  • [39] Improving source/drain contact resistance of amorphous indium-gallium-zinc-oxide thin-film transistors using an n+-ZnO buffer layer
    Hung, Chien-Hsiung
    Wang, Shui-Jinn
    Lin, Chieh
    Wu, Chien-Hung
    Chen, Yen-Han
    Liu, Pang-Yi
    Tu, Yung-Chun
    Lin, Tseng-Hsing
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (06)
  • [40] Influence of a Ni buffer layer on the optical and electrical properties of GZO/Ni bi-layered films
    Jeon, Jae-Hyun
    Gong, Tae-Kyung
    Kim, Sun-Kyung
    Kim, Seung-Hong
    Kim, So-Young
    Choi, Dong-Hyuk
    Son, Dong-Il
    Kim, Daeil
    JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 639 : 1 - 4
12345