Comparison of physical and electrical properties of GZO/ZnO buffer layer and GZO as source and drain electrodes of α-IGZO thin-film transistors

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[1] Wu, Jia-Ling
[2] Lin, Han-Yu
[3] Su, Bo-Yuan
[4] Chen, Yu-Cheng
[5] 1,Chu, Sheng-Yuan
[6] Liu, Ssu-Yin
[7] Chang, Chia-Chiang
[8] Wu, Chin-Jyi
来源：
Chu, S.-Y. (chusy@mail.ncku.edu.tw) | 1600年 / Elsevier Ltd卷 / 592期
关键词：
This work was supported by the National Science Council of Taiwan under Grants NSC 97-2221-E-006-241-MY3; NSC; 100-3113-E-006-015; 100-2120-M-006-001; and NSC 101-3113-E-006-014 and by the Display Technology Center; Industrial Technology Research Institute of Taiwan; under Grant 100-C-073;
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