Comparison of source/drain electrodes in thin-film transistors based on room temperature deposited zinc nitride films

被引：7

作者：

Dominguez, Miguel A. ^{[1
]}

Luis Pau, Jose ^{[2
]}

Orduna-Diaz, Abdu ^{[3
]}

Redondo-Cubero, Andres ^{[2
]}

机构：

[1] BUAP, Inst Ciencias, Ctr Invest Disposit Semicond, Puebla 72570, Mexico

[2] Univ Autonoma Madrid, Fac Ciencias, Grp Elect & Semicond, C Francisco Tomas y Valiente 7, E-28049 Madrid, Spain

[3] Inst Politecn Nacl, CIBA, Tlaxcala 72197, Mexico

来源：

SOLID-STATE ELECTRONICS | 2019年 / 156卷

关键词：

Zinc nitride; Thin-film transistors; Transparent devices; AZO; Spin-on glass; SPRAY-PYROLYSIS; PERFORMANCE; CHANNEL; ZNO;

D O I：

10.1016/j.sse.2019.03.032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the comparison of source/drain electrodes in thin film transistors (TFTs) based on room temperature deposited Zinc Nitride (Zn3N2) films is presented. Aluminum and aluminum doped zinc oxide (AZO) films are used as electrodes. Both devices exhibit an on/off-current ratio of 10(4) and a subthreshold slope close to 1 V/Dec. The extracted field-effect mobility was 4.5 cm(2)/Vs and 1 cm(2)/Vs for TFTs using aluminum and AZO, respectively. Better electrical characteristics are achieved with aluminum electrodes. However, AZO electrodes made possible the fabrication of fully transparent Zn3N2 TFTs, reported for first time in this work.

引用

页码：12 / 15

页数：4

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