Fabrication and characterization of 1 k-bit 1T2C-type ferroelectric memory cell array

被引：0
|
作者：
机构：
[1] Kim, Hyun-Soo
[2] Yamamoto, Shuu'ichirou
[3] Ishikawa, Toru
[4] Fuchikami, Takaaki
[5] Ohki, Hiroshi
[6] Ishiwara, Hiroshi
来源：
Kim, H.-S. | 1600年 / Japan Society of Applied Physics卷 / 44期
关键词：
Random access storage;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] 1T1C FeRAM Memory Array Based on Ferroelectric HZO with Capacitor under Bitline
    Okuno, Jun
    Kunihiro, Takafumi
    Konishi, Kenta
    Materano, Monica
    Ali, Tarek
    Kuehnel, Kati
    Seidel, Konrad
    Mikolajick, Thomas
    Schroeder, Uwe
    Tsukamoto, Masanori
    Umebayashi, Taku
    IEEE Journal of the Electron Devices Society, 2022, 10 : 29 - 34
  • [22] CHARACTERIZATION OF 8K-BIT NIOBIUM JOSEPHSON MEMORY CELL ARRAY FOR LSI APPLICATIONS
    HOKO, H
    IMAMURA, T
    FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1989, 25 (02): : 135 - 145
  • [23] A Compact Ferroelectric 2T-(n+1)C Cell to Implement AND-OR Logic in Memory
    Xiao, Yi
    Xu, Yixin
    Deng, Shan
    Zhao, Zijian
    George, Sumitha
    Ni, Kai
    Narayanan, Vijaykrishnan
    2023 IEEE COMPUTER SOCIETY ANNUAL SYMPOSIUM ON VLSI, ISVLSI, 2023, : 43 - 48
  • [24] SoC compatible 1T1C FeRAM memory array based on ferroelectric Hf0.5Zr0.5O2
    Okuno, Jun
    Kunihiro, Takafumi
    Konishi, Kenta
    Maemura, Hideki
    Shuto, Yusuke
    Sugaya, Fumitaka
    Materano, Monica
    Ali, Tarek
    Kuehnel, Kati
    Seidel, Konrad
    2020 IEEE SYMPOSIUM ON VLSI TECHNOLOGY, 2020,
  • [25] Characterization of an N-channel 1T-1C nonvolatile memory cell using ferroelectric SrBi2Ta2O9 as the capacitor dielectric
    Melnick, BM
    Gregory, J
    DeAraujo, CAP
    INTEGRATED FERROELECTRICS, 1995, 11 (1-4) : 145 - 160
  • [26] Design and Testing of a 1T-1C Dynamic Random Access Memory Cell Utilizing a Ferroelectric Transistor
    McCartney, Crystal Laws
    Mitchell, Cody
    Hunt, Mitchell
    Ho, Fat D.
    INTEGRATED FERROELECTRICS, 2014, 157 (01) : 1 - 11
  • [27] Inversion-Type Ferroelectric Capacitive Memory and Its 1-Kbit Crossbar Array
    Zhou, Zuopu
    Jiao, Leming
    Zhou, Jiuren
    Zheng, Zijie
    Chen, Yue
    Han, Kaizhen
    Kang, Yuye
    Gong, Xiao
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (04) : 1641 - 1647
  • [28] Operation simulation of an 8F21T2C-type ferroelectric memory array with a revised data writing method
    Kim, HS
    Yamamoto, S
    Ishiwara, H
    INTEGRATED FERROELECTRICS, 2003, 56 : 1045 - 1054
  • [29] The reliability of FeRAMS with 2T/2C or 1T/1C type cell structure
    Kang, YM
    Lee, SS
    Noh, KH
    Yang, B
    Chung, CH
    Kang, NS
    INTEGRATED FERROELECTRICS, 2001, 37 (1-4) : 445 - 454
  • [30] Proposal for 1T/1C ferroelectric random access memory with multiple storage and application to functional memory
    Kato, Hiroaki
    Nozawa, Hiroshi
    1600, Japan Society of Applied Physics (42):
12345