Fabrication and characterization of 1 k-bit 1T2C-type ferroelectric memory cell array

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[1] Kim, Hyun-Soo
[2] Yamamoto, Shuu'ichirou
[3] Ishikawa, Toru
[4] Fuchikami, Takaaki
[5] Ohki, Hiroshi
[6] Ishiwara, Hiroshi
来源：
Kim, H.-S. | 1600年 / Japan Society of Applied Physics卷 / 44期
关键词：
Random access storage;
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