Electrical and reliability characteristics of an ultrathin TaOxNy gate dielectric prepared by O3 annealing

被引：0

作者：

Jung, Hyungsuk ^{[1
]}

Sim, Hyunjun ^{[1
]}

Im, Kiju ^{[1
,2
]}

Yang, Dooyoung ^{[2
]}

Hwang, Hyunsang ^{[1
]}

机构：

[1] Department of Materials Science and Engineering, Kwangju Institute of Science and Technology #1, Oryong-dong, Puk-gu, Kwangju, 500-712, Korea, Republic of

[2] Jusung Engineering Co., #49, Neungpyeong, Opo., Kwangju-gun, Kyunggi, 464-890, Korea, Republic of

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 4 A期

关键词：

Ammonia - Annealing - Dielectric materials - Leakage currents - Oxidation - Permittivity - Reliability;

D O I：

10.1143/jjap.40.2221

中图分类号：

学科分类号：

摘要：

This letter describes a unique process for the preparation of high-quality tantalum oxynitride (TaOxNy) films via NH3 annealing of Ta2O5 followed by reoxidation in an O3 ambient for use in gate dielectric applications. Compared with tantalum oxide (Ta2O5), a significant improvement in dielectric constant was obtained by the ammonia treatment. Low-temperature reoxidation in an O3 ambient resulted in a significantly reduced leakage current. Compared with reoxidation in an O2 ambient, TaOxNy films prepared by reoxidation in an O3 ambient show less charge trapping under electrical stress.

引用

页码：2221 / 2222

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