Effect of post-metallization annealing on electrical characteristics of La2O3 gate thin films

被引：0
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作者：
Kuriyama, Atsushi [1 ]
Ohmi, Shun-Ichiro [2 ]
Tsutsui, Kazuo [2 ]
Iwai, Hiroshi [1 ]
机构：
[1] Frontier Collab. Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
[2] Interdisc. Grad. Sch. Sci. and Eng., Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2005年 / 44卷 / 02期
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页码：1045 / 1051
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