Electrical and reliability characteristics of an ultrathin TaOxNy gate dielectric prepared by O3 annealing

被引：0
|
作者：
Jung, Hyungsuk [1 ]
Sim, Hyunjun [1 ]
Im, Kiju [1 ,2 ]
Yang, Dooyoung [2 ]
Hwang, Hyunsang [1 ]
机构：
[1] Department of Materials Science and Engineering, Kwangju Institute of Science and Technology #1, Oryong-dong, Puk-gu, Kwangju, 500-712, Korea, Republic of
[2] Jusung Engineering Co., #49, Neungpyeong, Opo., Kwangju-gun, Kyunggi, 464-890, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 4 A期
关键词：
Ammonia - Annealing - Dielectric materials - Leakage currents - Oxidation - Permittivity - Reliability;
D O I：
10.1143/jjap.40.2221
中图分类号：
学科分类号：
摘要：
This letter describes a unique process for the preparation of high-quality tantalum oxynitride (TaOxNy) films via NH3 annealing of Ta2O5 followed by reoxidation in an O3 ambient for use in gate dielectric applications. Compared with tantalum oxide (Ta2O5), a significant improvement in dielectric constant was obtained by the ammonia treatment. Low-temperature reoxidation in an O3 ambient resulted in a significantly reduced leakage current. Compared with reoxidation in an O2 ambient, TaOxNy films prepared by reoxidation in an O3 ambient show less charge trapping under electrical stress.
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页码：2221 / 2222
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