RBR control applied on chemical-mechanical polishing process in ULSI manufacturing

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作者
Li, Xiujuan
Jin, Zhuji
Kang, Renke
Guo, Dongming
Su, Jianxiu
机构
[1] IP School, East China University of Politics and Law, Shanghai 200042, China
[2] Key Laboratory for Dalian University of Technology Precision and Non-traditional Machining, Dalian 116024, China
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摘要
Chemical-mechanical polishing (CMP) process is the key important planarization process in ULSI manufacturing. The RBR control applied on the CMP process is introduced in this paper. The RBR control of CMP process adjusts its recipe primarily relying on the measurement of the post-polishing parameters. There are many parameters which can influence the CMP process, and there are also some complex processes (for example the wear-out of the pad, and the exchange of the pad). So those make the RBR control of CMP process become a multi-object, multi-in-put and multi-out-put (MOMIMO) control process. Taking the double exponentially-weighted-moving-average method as an example, the control arithmetic is depicted. And the up to date research results are presented.
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页码:61 / 64
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