RBR control applied on chemical-mechanical polishing process in ULSI manufacturing

被引:0
|
作者
Li, Xiujuan
Jin, Zhuji
Kang, Renke
Guo, Dongming
Su, Jianxiu
机构
[1] IP School, East China University of Politics and Law, Shanghai 200042, China
[2] Key Laboratory for Dalian University of Technology Precision and Non-traditional Machining, Dalian 116024, China
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Chemical-mechanical polishing (CMP) process is the key important planarization process in ULSI manufacturing. The RBR control applied on the CMP process is introduced in this paper. The RBR control of CMP process adjusts its recipe primarily relying on the measurement of the post-polishing parameters. There are many parameters which can influence the CMP process, and there are also some complex processes (for example the wear-out of the pad, and the exchange of the pad). So those make the RBR control of CMP process become a multi-object, multi-in-put and multi-out-put (MOMIMO) control process. Taking the double exponentially-weighted-moving-average method as an example, the control arithmetic is depicted. And the up to date research results are presented.
引用
收藏
页码:61 / 64
相关论文
共 50 条
  • [21] PAD MATERIALS FOR CHEMICAL-MECHANICAL POLISHING
    MENDEL, E
    KAPLAN, P
    PATSIS, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C128 - C128
  • [22] A study on the stress and nonuniformity of the wafer surface for the chemical-mechanical polishing process
    Lin, Y.-Y. (loulin@ms17.hinet.net), 1600, Springer-Verlag London Ltd (22): : 5 - 6
  • [23] Effects of process parameters on chemical-mechanical interactions during sapphire polishing
    Xu, Wenhu
    Cheng, Yuanyao
    Zhong, Min
    MICROELECTRONIC ENGINEERING, 2019, 216
  • [24] Modeling of wafer topography's chemical-mechanical polishing effect on process
    Wu, Lixiao
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2007, 20 (04) : 439 - 450
  • [25] Characterization of scratches generated by a multiplaten copper chemical-mechanical polishing process
    Teo, TY
    Goh, WL
    Lim, VSK
    Leong, LS
    Tse, TY
    Chan, L
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (01): : 65 - 69
  • [26] ANALYSIS OF VELOCITY AS A CAUSE OF THICKNESS VARIATION IN A CHEMICAL-MECHANICAL POLISHING PROCESS
    COLACINO, JJ
    BARTUSH, TA
    SOLID STATE TECHNOLOGY, 1973, 16 (08) : 30 - 30
  • [27] A study on the stress and nonuniformity of the wafer surface for the chemical-mechanical polishing process
    Yeou-Yih Lin
    Ship-Peng Lo
    The International Journal of Advanced Manufacturing Technology, 2003, 22 : 401 - 409
  • [28] Three-dimensional chemical-mechanical polishing process model by BEM
    Yoshida, T
    CHEMICAL MECHANICAL PLANARIZATION IN IC DEVICE MANUFACTURING III, PROCEEDINGS, 2000, 99 (37): : 593 - 604
  • [29] Study of Optimal Dummy Fill Modes in Chemical-Mechanical Polishing Process
    Ma, Tianyu
    Chen, Lan
    Fang, Jingjing
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2012, 2 (06): : 1043 - 1047
  • [30] A study on the stress and nonuniformity of the wafer surface for the chemical-mechanical polishing process
    Lin, YY
    Lo, SP
    INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY, 2003, 22 (5-6): : 401 - 409