Computer processing of X-ray topography images of structure defects in single crystals

被引：0
|
作者：
Drozdov, U.A.
Okunev, A.O.
Tkal, V.A.
机构：
来源：
Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya | 2002年 / 08期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：6 / 12
相关论文
共 50 条
  • [21] X-RAY TOPOGRAPHY STUDY OF REAL STRUCTURE OF BERLINITE CRYSTALS
    ALESHKOOZHEVSKII, OP
    ZVEREVA, OV
    POGOSYAN, AS
    BEZDELKIN, VV
    [J]. KRISTALLOGRAFIYA, 1990, 35 (04): : 939 - 944
  • [22] Characterization of lattice defects in strontium titanate single crystals by X-ray topography and transmission electron microscopy
    Yamanaka, J
    Yoshimura, J
    Kimura, S
    [J]. JOURNAL OF ELECTRON MICROSCOPY, 2000, 49 (01): : 89 - 92
  • [23] X-RAY TOPOGRAPHY OF CDTE CRYSTALS
    GHEZZI, C
    PAORICI, C
    [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 21 (01) : 58 - 60
  • [24] X-ray topography of lysozyme crystals
    Izumi, K
    Sawamura, S
    Ataka, M
    [J]. JOURNAL OF CRYSTAL GROWTH, 1996, 168 (1-4) : 106 - 111
  • [25] X-RAY TOPOGRAPHY ON SEMICONDUCTOR CRYSTALS
    BARTELS, WJ
    [J]. ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 1985, 170 (1-4): : 6 - 7
  • [26] X-RAY TOPOGRAPHY OF TWINNED CRYSTALS
    KLAPPER, H
    [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1987, 14 : 367 - 401
  • [27] X-RAY TOPOGRAPHY OF BENT CRYSTALS
    CHUKHOVSKII, FN
    PETRASHEN, PV
    [J]. ACTA CRYSTALLOGRAPHICA SECTION A, 1988, 44 : 8 - 14
  • [28] OBSERVATIONS OF DEFECTS ASSOCIATED WITH CLEAVAGE IN NB CRYSTALS USING X-RAY TOPOGRAPHY
    HMELO, AB
    BILELLO, JC
    [J]. JOURNAL OF METALS, 1982, 34 (08): : 4 - 4
  • [29] X-ray diffraction projection topography: Possibilities of the quantitative analysis of images of defects
    Suvorov E.V.
    Smirnova I.A.
    [J]. Suvorov, E. V. (suvorov@issp.ac.ru), 1600, Izdatel'stvo Nauka (07): : 1044 - 1046
  • [30] On determination of the depth and structure of damaged surface layers in single crystals by X-ray topography techniques
    Skorokhod, MY
    [J]. METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 1996, 18 (06): : 41 - 45
12345