Impact of rapid thermal processing on oxygen precipitation in heavily arsenic and antimony doped Czochralski silicon

被引:0
|
作者
机构
[1] Zhang, Xinpeng
[2] Gao, Chao
[3] Fu, Maosen
[4] Ma, Xiangyang
[5] Vanhellemont, Jan
[6] Yang, Deren
来源
Ma, X. (mxyoung@zju.edu.cn) | 1600年 / American Institute of Physics Inc.卷 / 113期
关键词
Arsenic;
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] OXYGEN PRECIPITATION IN HEAVILY DOPED SILICON
    BAINS, SK
    GRIFFITHS, DP
    WILKES, JG
    SERIES, RW
    BARRACLOUGH, KG
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (02) : 647 - 652
  • [22] Oxygen precipitation heterogeneously nucleating on silicon phosphide precipitates in heavily phosphorus-doped Czochralski silicon
    Zeng, Yuheng
    Ma, Xiangyang
    Tian, Daxi
    Wang, Weiyan
    Gong, Longfei
    Yang, Deren
    Que, Duanlin
    Journal of Applied Physics, 2009, 105 (09):
  • [23] Oxygen precipitation heterogeneously nucleating on silicon phosphide precipitates in heavily phosphorus-doped Czochralski silicon
    Zeng, Yuheng
    Ma, Xiangyang
    Tian, Daxi
    Wang, Weiyan
    Gong, Longfei
    Yang, Deren
    Que, Duanlin
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (09)
  • [24] Impacts of back surface conditions on the behavior of oxygen in heavily arsenic doped Czochralski silicon wafers
    Wang, Q
    Daggubati, M
    Paravi, H
    Yu, R
    Zhang, XF
    Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices, 2005, 864 : 71 - 76
  • [25] OXYGEN PRECIPITATION IN HEAVILY BORON-DOPED CZOCHRALSKI SI
    STOJANOFF, V
    PIMENTEL, CA
    BULLA, DA
    CASTRO, WE
    HAHN, S
    PONCE, FA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C103 - C103
  • [26] OXYGEN INCORPORATION AND PRECIPITATION BEHAVIOR IN HEAVILY BORON-DOPED CZOCHRALSKI SILICON-CRYSTALS
    CHOE, KS
    JOURNAL OF CRYSTAL GROWTH, 1995, 147 (1-2) : 55 - 63
  • [27] Influence of rapid thermal annealing on thermal donor formation and oxygen precipitation in Czochralski silicon
    Takeno, H
    Aihara, K
    Hayamizu, Y
    Masui, T
    Suezawa, M
    PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON DEFECTS IN SILICON, 1999, 99 (01): : 150 - 161
  • [28] Simulation of antimony diffusion in heavily arsenic-doped silicon
    NTT System Electronics Lab, Kanagawa, Japan
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 4 A (1693-1696):
  • [29] Simulation of antimony diffusion in heavily arsenic-doped silicon
    Uematsu, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (4A): : 1693 - 1696
  • [30] Effect of rapid thermal process on oxygen precipitation in electron irradiated czochralski silicon
    Cai, Lili
    Chen, Guifeng
    Li, Yangxian
    Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society, 2010, 38 (02): : 196 - 200