Impact of rapid thermal processing on oxygen precipitation in heavily arsenic and antimony doped Czochralski silicon

被引:0
|
作者
机构
[1] Zhang, Xinpeng
[2] Gao, Chao
[3] Fu, Maosen
[4] Ma, Xiangyang
[5] Vanhellemont, Jan
[6] Yang, Deren
来源
Ma, X. (mxyoung@zju.edu.cn) | 1600年 / American Institute of Physics Inc.卷 / 113期
关键词
Arsenic;
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [41] Oxide precipitation behavior in heavily doped silicon wafer after rapid thermal process
    Sun, Shilong
    Sun, Weizhong
    Hao, Qiuyan
    Wang, Lijian
    Teng, Xiaoyun
    Liu, Caichi
    Xu, Yuesheng
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (1-3) : 78 - 81
  • [42] Impact of arsenic and phosphorus concentration on oxygen content in heavily doped silicon single crystal
    Scala, Roberto
    Porrini, Maria
    Voronkov, Vladimir
    JOURNAL OF CRYSTAL GROWTH, 2020, 548 (548)
  • [43] Impact of Rapid Thermal Oxidation at Ultrahigh-Temperatures on Oxygen Precipitation Behavior in Czochralski-Silicon Crystals II
    Araki, Koji
    Maeda, Susumu
    Sudo, Haruo
    Aoki, Tatsuhiko
    Izunome, Koji
    ECS SOLID STATE LETTERS, 2014, 3 (09) : P114 - P115
  • [44] OXYGEN PRECIPITATION IN CZOCHRALSKI SILICON
    CRAVEN, RA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C93 - C93
  • [45] Impact of Rapid Thermal Oxidation at Ultrahigh-Temperatures on Oxygen Precipitation Behavior in Czochralski-Silicon Crystals III
    Araki, Koji
    Sudo, Haruo
    Maeda, Susumu
    ECS SOLID STATE LETTERS, 2015, 4 (09) : P63 - P65
  • [46] OXYGEN PRECIPITATION AND THERMAL DONOR FORMATION IN CZOCHRALSKI-GROWN SILICON DOPED WITH CARBON AND TIN
    WIJARANAKULA, W
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) : 2737 - 2739
  • [47] Effect of Oxygen Precipitation in Nitrogen-Doped Annealed Silicon Wafers on Thermal Strain Induced by Rapid Thermal Processing
    Araki, Koji
    Sudo, Haruo
    Aoki, Tatsuhiko
    Senda, Takeshi
    Isogai, Hiromichi
    Tsubota, Hiroyuki
    Miyashita, Moriya
    Matsumura, Hisashi
    Saito, Hiroyuki
    Maeda, Susumu
    Kashima, Kazuhiko
    Izunome, Koji
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (08)
  • [48] Recombination activity of nickel in nitrogen-doped Czochralski silicon treated by rapid thermal processing
    Wang, Weiyan
    Yang, Deren
    Ma, Xiangyang
    Zeng, Yuheng
    Que, Duanlin
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2007, 10 (4-5) : 222 - 226
  • [49] Rapid-thermal-processing-based intrinsic gettering for nitrogen-doped Czochralski silicon
    Ma, XY
    Fu, LM
    Tian, DX
    Yang, DR
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (08)
  • [50] Dissolution of oxygen precipitates in germanium-doped Czochralski silicon during rapid thermal annealing
    Chen, Jiahe
    Yang, Deren
    Ma, Xiangyang
    Li, Hong
    Fu, Liming
    Li, Ming
    Que, Duanlin
    JOURNAL OF CRYSTAL GROWTH, 2007, 308 (02) : 247 - 251