Preparation and ferroelectric properties of Si-based Pb(Zr0.4, Ti0.6)O3 capacitor using Ni-Nb as the barrier layer

被引：0
|
作者：
Zhao, Qing-Xun [1 ]
Qi, Chen-Guang [1 ]
Jia, Dong-Mei [1 ]
Fu, Yue-Ju [1 ]
Guo, Jian-Xin [1 ]
Liu, Bao-Ting [1 ]
机构：
[1] College of Physics Science and Technology, Hebei University, Baoding 071002, China
来源：
Rengong Jingti Xuebao/Journal of Synthetic Crystals | 2013年 / 42卷 / 02期
关键词：
14;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：282 / 285
相关论文
共 50 条
  • [1] Effect of annealing conditions on the structural and physical properties of Si-based Pb(Zr0.4, Ti0.6)O3 ferroelectric capacitors with Ti-Al film as a barrier layer
    Guo, Ying-Nan
    Liu, Bao-Ting
    Zhao, Jing-Wei
    Wang, Kuan-Mao
    Wang, Yu-Qiang
    Sun, Jie
    Chen, Jian-Hui
    Rengong Jingti Xuebao/Journal of Synthetic Crystals, 2010, 39 (01): : 62 - 66
  • [2] Ferroelectric properties of La0.5Sr0.5CoO3/Pb(Zr0.4, Ti0.6)O3/RuO2 capacitors
    Atoh, Hirokazu
    Doi, Hidekazu
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (9 B): : 5368 - 5374
  • [3] Ferroelectric properties of La0.5Sr0.5CoO3/Pb(Zr0.4, Ti0.6)O3/RuO2 capacitors
    Atoh, H
    Doi, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9B): : 5368 - 5374
  • [4] Low-temperature crystallization of Pb(Zr0.4,Ti0.6)O3 thin films by chemical solution deposition
    Maki, K
    Soyama, N
    Nagamine, K
    Mori, S
    Ogi, K
    FERROELECTRIC THIN FILMS X, 2002, 688 : 27 - 32
  • [5] Low-temperature crystallization of sol-gel derived Pb(Zr0.4,Ti0.6)O3 thin films
    Maki, K
    Soyama, N
    Nagamine, K
    Mori, S
    Ogi, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (9B): : 5533 - 5538
  • [6] Structure and properties of La0.5Sr0.5 CoO3 /Pb(Zr0.4 Ti0.6)O3 /La0.5Sr0.5 CoO3 ferroelectric capacitor
    Chen, Jiang-En
    Liu, Bao-Ting
    Sun, Jie
    Guo, Yan-Ling
    Ma, Lei
    Lou, Jian-Zhong
    Peng, Ying-Cai
    Rengong Jingti Xuebao/Journal of Synthetic Crystals, 2010, 39 (02): : 350 - 354
  • [7] Low-temperature crystallization of sol-gel derived Pb(Zr0.4,Ti0.6)O3 thin films
    Maki, Kazunari
    Soyama, Nobuyuki
    Nagamine, Kaoru
    Mori, Satoru
    Ogi, Katsumi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (9 B): : 5533 - 5538
  • [8] Leakage current property of Pb(Zr0.4,Ti0.6)O3 thin-film capacitors with highly rectangular hysteresis property
    Okamura, Soichiro
    Tanimura, Mitsumasa
    Shima, Hiromi
    Naganuma, Hiroshi
    2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2, 2007, : 91 - 93
  • [9] On the suppression of hydrogen degradation in Pb Zr0.4 Ti 0.6 O3 ferroelectric capacitors with Pt Ox top electrode
    Huang, C.-K., 1600, American Institute of Physics Inc. (98):
  • [10] Fabrication and properties of Ru/Pb(Zr0.4Ti0.6)O3/Pt capacitor
    Hu, Hong
    Jia, Ze
    Liu, Tian-zhi
    Xie, Dan
    Zhang, Zhi-gang
    Ren, Tian-ling
    Liu, Li-tian
    INTEGRATED FERROELECTRICS, 2006, 84 : 219 - 225
12345