Preparation and ferroelectric properties of Si-based Pb(Zr0.4, Ti0.6)O3 capacitor using Ni-Nb as the barrier layer

被引：0
|
作者：
Zhao, Qing-Xun [1 ]
Qi, Chen-Guang [1 ]
Jia, Dong-Mei [1 ]
Fu, Yue-Ju [1 ]
Guo, Jian-Xin [1 ]
Liu, Bao-Ting [1 ]
机构：
[1] College of Physics Science and Technology, Hebei University, Baoding 071002, China
来源：
Rengong Jingti Xuebao/Journal of Synthetic Crystals | 2013年 / 42卷 / 02期
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页码：282 / 285
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