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- [8] Multi-level resistive switching in HfO2/Al2O3/HfO2 based memristor on transparent ITO electrode 2020 INTERNATIONAL CONFERENCE ON ELECTRONICS, INFORMATION, AND COMMUNICATION (ICEIC), 2020,
- [9] A comparison of resistive switching parameters for memristive devices with HfO2 monolayers and Al2O3/HfO2 bilayers at the wafer scale 2023 14TH SPANISH CONFERENCE ON ELECTRON DEVICES, CDE, 2023,
- [10] Interface trap characterization of AlN/GaN heterostructure with Al2O3, HfO2, and HfO2/Al2O3 dielectrics JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2019, 37 (04):