The synergistic effects of additives on the micro vias copper filling

被引：0
|
作者：
Tao, Zhihua [1 ]
Long, Zhiyuan [1 ]
Tengxu, Linjie [1 ]
Liu, Guanting [1 ]
Tao, Xuefei [2 ]
机构：
[1] School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu,610054, China
[2] Jiangxi Vocational College of Finance and Economics, Jiujiang,332000, China
来源：
Journal of Electroanalytical Chemistry | 2022年 / 918卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Electroplating
引用
收藏
相关论文
共 50 条
  • [41] Influence of convection-dependent adsorption of additives on microvia filling by copper electroplating
    Dow, WP
    Huang, HS
    Yen, MY
    Huang, HC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (06) : C425 - C434
  • [42] Synergistic effects of additives on impurity residues in high-speed copper electrodeposition and voiding propensity in solder joints
    Tsai, Kun-Lin
    Chen, Chih-Ming
    Ho, Cheng-En
    JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS, 2024, 156
  • [43] Effects of additives on via filling and pattern plating with simultaneous electroplating
    Sun, Zhihong
    Wang, Jing
    CIRCUIT WORLD, 2023, 49 (02) : 105 - 112
  • [44] SYNERGISTIC EFFECTS IN THE INHIBITION OF COPPER CORROSION
    GONZALEZ, S
    LAZ, MM
    SOUTO, RM
    SALVAREZZA, RC
    ARVIA, AJ
    CORROSION, 1993, 49 (06) : 450 - 456
  • [45] Void free filling of TSV vias by bottom up copper electroplating for wafer level MEMS vacuum packaging
    Xu, Chunlin
    Wang, Xuefang
    Wang, Yuzhe
    Xu, Minghai
    Hu, Chang
    Liu, Sheng
    2012 13TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP 2012), 2012, : 64 - 67
  • [46] Thermal Annealing Effects on Copper Microstructure in Through-Silicon-Vias
    Song, Yaqin
    Abbaspour, Reza
    Bakir, Muhannad S.
    Sitaraman, Suresh K.
    2016 15TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM), 2016, : 91 - 95
  • [47] Metal seed layer sputtering on high aspect ratio through-silicon-vias for copper filling electroplating
    Song, Young Sik
    Yim, TaiHong
    Park, Soo-Keun
    Lee, Jae-Ho
    Kim, Jongryoul
    ELECTROCHIMICA ACTA, 2013, 114 : 832 - 837
  • [48] Effect of External Factors on Copper Filling in 3D Integrated Through-Silicon-Vias (TSVs)
    Zhang, Yazhou
    Ding, Guifu
    Wang, Hong
    Cheng, Ping
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2015, 162 (09) : D427 - D434
  • [49] A novel bottom-up copper filling of blind silicon vias in 3D electronic packaging
    Du, Li
    Shi, Tielin
    Su, Lei
    Xue, Dongmin
    Liao, Guanglan
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2015, 25 (04)
  • [50] Leveling and microstructural effects of additives for copper electrodeposition
    Kelly, JJ
    Tian, CY
    West, AC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (07) : 2540 - 2545
12345