Crystalline quality improvement of face-to-face annealed MOVPE-grown AlN on vicinal sapphire substrate with sputtered nucleation layer

被引：0

作者：

Kuboya, Shigeyuki ^{[1
]}

Uesugi, Kenjiro ^{[1
]}

Shojiki, Kanako ^{[2
]}

Tezen, Yuta ^{[1
]}

Norimatsu, Kenji ^{[1
]}

Miyake, Hideto ^{[2
,3
]}

机构：

[1] Strategic Planning Office for Regional Revitalization, Mie University, 1577 Kurimamachiya, Tsu,Mie,514-8507, Japan

[2] Graduate School of Engineering, Mie University, 1577 Kurimamachiya, Tsu,Mie,514-8507, Japan

[3] Graduate School of Regional Innovation Studies, Mie University, 1577 Kurimamachiya, Tsu,Mie,514-8507, Japan

来源：

Journal of Crystal Growth | 2020年 / 545卷

关键词：

Aluminum nitride;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 45 条

[21] Crystal quality improvement of sputtered AlN film on sapphire substrate by high-temperature annealing
Lu Zhao
Kun Yang
Yujie Ai
Lian Zhang
Xiaolong Niu
Hongrui Lv
Yun Zhang
Journal of Materials Science: Materials in Electronics, 2018, 29 : 13766 - 13773
[22] Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer
Hongpo Hu
Shengjun Zhou
Hui Wan
Xingtong Liu
Ning Li
Haohao Xu
Scientific Reports, 9
[23] Period size effect induced crystalline quality improvement of AlN on a nanopatterned sapphire substrate
Xie, Nan
Xu, Fujun
Zhang, Na
Lang, Jing
Wang, Jiaming
Wang, Mingxing
Sun, Yuanhao
Liu, Baiyin
Ge, Weikun
Qin, Zhixin
Kang, Xiangning
Yang, Xuelin
Wang, Xinqiang
Shen, Bo
JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (10)
[24] High-Quality ZnO Layers Grown by CVD on Sapphire Substrates with an AlN Nucleation Layer
Muller, Raphael
Huber, Florian
Toews, Matthias
Mangold, Martin
Madel, Manfred
Scholz, Jan-Patrick
Minkow, Alexander
Herr, Ulrich
Thonke, Klaus
CRYSTAL GROWTH & DESIGN, 2020, 20 (06) : 3918 - 3926
[25] Investigation of nitridation time on the quality of AlGaN/GaN heterojunction grown on AlN-sputtered sapphire substrate
Ma, Depu
Xu, Shengrui
Tao, Hongchang
Li, Wen
Peng, Ruoshi
Du, Jinjuan
Fan, Xiaomeng
Zhao, Ying
Zhang, Jincheng
Hao, Yue
MATERIALS LETTERS, 2020, 277
[26] Producing deep UV-LEDs in high-yield MOVPE by improving AlN crystal quality with sputtered AlN nucleation layer
Zejie Du
Ruifei Duan
Tongbo Wei
Shuo Zhang
Junxi Wang
Xiaoyan Yi
Yiping Zeng
Junxue Ran
Jinmin Li
Boyu Dong
Journal of Semiconductors, 2017, (11) : 30 - 34
[27] Producing deep UV-LEDs in high-yield MOVPE by improving AlN crystal quality with sputtered AlN nucleation layer
Zejie Du
Ruifei Duan
Tongbo Wei
Shuo Zhang
Junxi Wang
Xiaoyan Yi
Yiping Zeng
Junxue Ran
Jinmin Li
Boyu Dong
Journal of Semiconductors, 2017, 38 (11) : 30 - 34
[28] Improved crystalline quality of AlN epitaxial layer on sapphire by introducing TMGa pulse flow into the nucleation stage
Wu, Hualong
Wang, Hailong
Chen, Yingda
Zhang, Lingxia
Chen, Zimin
Wu, Zhisheng
Wang, Gang
Jiang, Hao
JOURNAL OF CRYSTAL GROWTH, 2018, 490 : 56 - 60
[29] Characterization and optimization of sputtered AlN buffer layer on r-plane sapphire substrate to improve the crystalline quality of nonpolar a-plane GaN
Jinno, Daiki
Otsuki, Shunya
Sugimori, Shogo
Daicho, Hisayoshi
Iwaya, Motoaki
Takeuchi, Tetsuya
Kamiyama, Satoshi
Akasaki, Isamu
JOURNAL OF CRYSTAL GROWTH, 2017, 480 : 90 - 95
[30] Crack-free growth of UVC LEDs on 6-inch sapphire substrates using face-to-face high-temperature annealed AlN by production scale MOCVD
Yoshinaga, J.
Ikejiri, K.
Koseki, S.
Uesugi, K.
Miyake, H.
GALLIUM NITRIDE MATERIALS AND DEVICES XIX, 2024, 12886

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