Crystalline quality improvement of face-to-face annealed MOVPE-grown AlN on vicinal sapphire substrate with sputtered nucleation layer

被引：0

作者：

Kuboya, Shigeyuki ^{[1
]}

Uesugi, Kenjiro ^{[1
]}

Shojiki, Kanako ^{[2
]}

Tezen, Yuta ^{[1
]}

Norimatsu, Kenji ^{[1
]}

Miyake, Hideto ^{[2
,3
]}

机构：

[1] Strategic Planning Office for Regional Revitalization, Mie University, 1577 Kurimamachiya, Tsu,Mie,514-8507, Japan

[2] Graduate School of Engineering, Mie University, 1577 Kurimamachiya, Tsu,Mie,514-8507, Japan

[3] Graduate School of Regional Innovation Studies, Mie University, 1577 Kurimamachiya, Tsu,Mie,514-8507, Japan

来源：

Journal of Crystal Growth | 2020年 / 545卷

关键词：

Aluminum nitride;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 45 条

[31] Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition
Li, Xiao-Hang
Wei, Yong O.
Wang, Shuo
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Mao, Tsung-Ting
Satter, Md. Mahbub
Shen, Shyh-Chiang
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Detchprohm, Theeradetch
Dupuis, Russell D.
Fischer, Alec M.
Ponce, Fernando A.
JOURNAL OF CRYSTAL GROWTH, 2015, 414 : 76 - 80
[32] Characterization and optimization of AlN nucleation layer for nonpolar a-plane GaN grown on r-plane sapphire substrate
Die, Junhui
Wang, Caiwei
Yan, Shen
Hu, Xiaotao
Hu, Wei
Ma, Ziguang
Deng, Zhen
Du, Chunhua
Wang, Lu
Jia, Haiqiang
Wang, Wenxin
Jiang, Yang
Chen, Hong
SUPERLATTICES AND MICROSTRUCTURES, 2019, 130 : 215 - 220
[33] High-efficiency AlGaN based UV emitters grown on high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate
Iida, K.
Watanabe, H.
Takeda, K.
Nagai, T.
Sumii, T.
Nagamatsu, K.
Kawashima, T.
Balakrishnan, K.
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PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (06): : 2000 - 2004
[34] Annealing of the sputtered AlN buffer layer on r-plane sapphire and its effect on a-plane GaN crystalline quality
Jinno, Daiki
Otsuki, Shunya
Niimi, Teruyuki
Sugimori, Shogo
Daicho, Hisayoshi
Iwaya, Motoaki
Takeuchi, Tetsuya
Kamiyama, Satoshi
Akasaki, Isamu
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2017, 254 (08):
[35] Effect of strain relaxation on performance of lnGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AIN nucleation layer
Hu, Hongpo
Zhou, Shengjun
Wan, Hui
Liu, Xingtong
Li, Ning
Xu, Haohao
SCIENTIFIC REPORTS, 2019, 9 (1)
[36] Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD
Su, Zhaole
Kong, Rui
Hu, Xiaotao
Song, Yimeng
Deng, Zhen
Jiang, Yang
Li, Yangfeng
Chen, Hong
VACUUM, 2022, 201
[37] Improvement of homoepitaxial layer quality grown on 4H-SiC Si-face substrate lower than 1 degree off angle
Kojima, Kazutoshi
Ito, Sachiko
Nagata, Akiyo
Okumura, Hajime
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 141 - +
[38] Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate
Lee, Chia-Yu
Tzou, An-Jye
Lin, Bing-Cheng
Lan, Yu-Pin
Chiu, Ching-Hsueh
Chi, Gou-Chung
Chen, Chi-Hsiang
Kuo, Hao-Chung
Lin, Ray-Ming
Chang, Chun-Yen
NANOSCALE RESEARCH LETTERS, 2014, 9
[39] Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate
Chia-Yu Lee
An-Jye Tzou
Bing-Cheng Lin
Yu-Pin Lan
Ching-Hsueh Chiu
Gou-Chung Chi
Chi-Hsiang Chen
Hao-Chung Kuo
Ray-Ming Lin
Chun-Yen Chang
Nanoscale Research Letters, 9
[40] Two-step growth of crack-free 5 μm-thick Al0.2Ga0.8N on sapphire substrate with sputtered AlN nucleation layer
Li, Y. Q.
Tian, A. Q.
Liu, J. P.
Li, X.
Li, F. Z.
Zhou, W.
Ikeda, M.
Yang, H.
JOURNAL OF APPLIED PHYSICS, 2025, 137 (06)

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