Investigation of plasma treatment conditions for wafer-scale room-temperature bonding using ultrathin Au films in ambient air

被引：0
|
作者：
Yamamoto M. [1 ,2 ]
Matsumae T. [2 ]
Kurashima Y. [2 ]
Takagi H. [2 ]
Suga T. [1 ]
Itoh T. [1 ]
Higurashi E. [1 ,2 ]
机构：
[1] University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo
[2] National Institute of Advanced Industrial Science and Technology, 1-2-1, Namiki, Tsukuba, Ibaraki
来源：
IEEJ Transactions on Sensors and Micromachines | 2019年 / 139卷 / 07期
关键词：
Au-Au bonding; Plasma treatment; Ultrathin Au films; Wafer-scale room-temperature bonding;
D O I：
10.1541/ieejsmas.139.217
中图分类号：
学科分类号：
摘要：
Pretreatment using Ar or O2 plasma was investigated for wafer-scale room-temperature bonding using ultrathin Au films in ambient air. The main difference between Ar plasma and O2 plasma is their surface activation mechanism: physical etching and chemical reaction, respectively. Bonding strength of samples obtained by Ar plasma treatment was strong enough to be broken from Si substrates, while that of samples obtained by O2 plasma treatment was only about 0.1 J/m2 © 2019 The Institute of Electrical Engineers of Japan.
引用
收藏
页码：217 / 218
页数：1
相关论文
共 50 条
  • [31] Room-Temperature Bonding of Vertical-Cavity Surface-Emitting Laser Chips on Si Substrates Using Au Microbumps in Ambient Air
    Takigawa, Ryo
    Higurashi, Eiji
    Suga, Tadatomo
    Sawada, Renshi
    APPLIED PHYSICS EXPRESS, 2008, 1 (11) : 1122011 - 1122012
  • [32] Wafer-scale spontaneous bonding of silicon wafers by argon-beam surface activation at room temperature
    Takagi, H
    Maeda, R
    Suga, T
    SENSORS AND ACTUATORS A-PHYSICAL, 2003, 105 (01) : 98 - 102
  • [33] Communication-Fluorinated Plasma Treatments Using PTFE Substrates for Room-Temperature Silicon Wafer Direct Bonding
    Wang, Chenxi
    Suga, Tadatomo
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2016, 5 (07) : P393 - P395
  • [34] Room-temperature Au-Au bonding in atmospheric air using direct transferred atomically smooth Au film on electroplated patterns
    Kurashima, Yuichi
    Matsumae, Takashi
    Takagi, Hideki
    MICROELECTRONIC ENGINEERING, 2018, 189 : 1 - 5
  • [35] Room-temperature crystallization of amorphous films by RF plasma treatment
    Ohsaki, H.
    Shibayama, Y.
    Yoshida, N.
    Watanabe, T.
    Kanemaru, S.
    THIN SOLID FILMS, 2009, 517 (10) : 3092 - 3095
  • [36] Room-Temperature Direct Bonding Using Fluorine Containing Plasma Activation
    Wang, Chenxi
    Suga, Tadatomo
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (05) : H525 - H529
  • [37] Room-Temperature Bonding Using Fluorine Containing Plasma Activation and Its Bonding Mechanism
    Wang, Chenxi
    Suga, Tadatomo
    SEMICONDUCTOR WAFER BONDING 11: SCIENCE, TECHNOLOGY, AND APPLICATIONS - IN HONOR OF ULRICH GOSELE, 2010, 33 (04): : 485 - 494
  • [38] Room temperature wafer bonding using oxygen plasma treatment in reactive ion etchers with and without inductively coupled plasma
    Sanz-Velasco, A
    Amirfeiz, P
    Bengtsson, S
    Colinge, C
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (02) : G155 - G162
  • [39] Room-Temperature Wafer Bonding with Titanium Thin Films Based on Formation of Ti/Si Amorphous Layers
    Higurashi, Eiji
    Azuma, Hayato
    Yamamoto, Michitaka
    Matsumae, Takeshi
    Kurashima, Yuichi
    Takagi, Hideki
    Suga, Tadatomo
    PROCEEDINGS OF 2019 6TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D), 2019, : 84 - 84
  • [40] Room-temperature Wafer Direct Bonding Using Ne-beam Surface-Activation
    Takagi, H.
    Kurashima, Y.
    Maeda, A.
    SEMICONDUCTOR WAFER BONDING 13: SCIENCE, TECHNOLOGY, AND APPLICATIONS, 2014, 64 (05): : 69 - 75
12345