Investigation of plasma treatment conditions for wafer-scale room-temperature bonding using ultrathin Au films in ambient air

被引：0
|
作者：
Yamamoto M. [1 ,2 ]
Matsumae T. [2 ]
Kurashima Y. [2 ]
Takagi H. [2 ]
Suga T. [1 ]
Itoh T. [1 ]
Higurashi E. [1 ,2 ]
机构：
[1] University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo
[2] National Institute of Advanced Industrial Science and Technology, 1-2-1, Namiki, Tsukuba, Ibaraki
来源：
IEEJ Transactions on Sensors and Micromachines | 2019年 / 139卷 / 07期
关键词：
Au-Au bonding; Plasma treatment; Ultrathin Au films; Wafer-scale room-temperature bonding;
D O I：
10.1541/ieejsmas.139.217
中图分类号：
学科分类号：
摘要：
Pretreatment using Ar or O2 plasma was investigated for wafer-scale room-temperature bonding using ultrathin Au films in ambient air. The main difference between Ar plasma and O2 plasma is their surface activation mechanism: physical etching and chemical reaction, respectively. Bonding strength of samples obtained by Ar plasma treatment was strong enough to be broken from Si substrates, while that of samples obtained by O2 plasma treatment was only about 0.1 J/m2 © 2019 The Institute of Electrical Engineers of Japan.
引用
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页码：217 / 218
页数：1
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