GaN System-on-Chip: Pushing the Limits of Integration and Functionality

被引:0
|
作者
Nikandish, Reza [1 ]
机构
[1] Univ Coll Dublin, Sch Elect & Elect Engn, Dublin, Ireland
来源
IEEE JOURNAL OF MICROWAVES | 2024年 / 4卷 / 04期
关键词
Chiplet; integrated circuit (IC); integrated sensing and communication (ISAC); GaN; low-noise amplifier (LNA); power amplifier (PA); switch; system-in-package (SiP); system-on-chip (SoC); transceiver; transmitter; POWER-AMPLIFIER; RECEIVER; SILICON; DESIGN; PHASE;
D O I
10.1109/JMW.2024.3429615
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this article, we present a futuristic perspective on GaN integrated circuit technology, discuss technical challenges that hinder leveraging the capabilities of the GaN process, and provide recommendations to push its limits of integration and functionality. We explore the limitations of current GaN processes at the process, circuit, and system levels, and present some potential developments to mitigate these limitations. The most recent progresses in GaN circuits has been inspired by the quest for higher performance, which has influenced innovations in circuit and system architectures. A promising solution is to pursue a functionality-oriented design paradigm in parallel with the traditional performance-oriented design approach. A review of state-of-the-art GaN transceivers indicates that most comprise merely a power amplifier (PA), a low-noise amplifier (LNA), and transmit-receive (T/R) switches. We propose three disruptive directions that potentially can reshape the future of highly integrated GaN systems, including a digital PA, an integrated sensing and communication (ISAC) transceiver, and GaN-CMOS chiplets in package, and investigate their prospects and challenges.
引用
收藏
页码:594 / 604
页数:11
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