CMOS Technology Scaling for System-On-Chip Integration - Past, Present and Future

被引:1
|
作者
Jan, Chia-Hong [1 ]
机构
[1] Intel Corp, Log Technol Dev Technol Mfg Grp, Hillsboro, OR 97124 USA
关键词
METAL-GATE TRANSISTORS; LOGIC TECHNOLOGY; STRAINED SILICON;
D O I
10.1149/1.3694354
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The challenges of System-on-Chip (SoC) technology scaling are reviewed. It is shown that the key ingredients of an SoC process technology, including high performance logic transistors, low power transistors, high voltage transistors, memory, passives, analog and RF features are all benefited by Moore's Law. State-of-the-art CMOS technologies are powered by not just dimensional scaling, rather it incorporates the introduction of innovative device structures, development of the new materials and construction of new manufacturing equipment. It is expected that Moore's Law and CMOS scaling will continue in the near future, being powered by 3-D innovations in transistors, interconnects and packaging, supported by new materials and equipment.
引用
收藏
页码:451 / 470
页数:20
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