Past, Present and Future: SiGe and CMOS Transistor Scaling

被引：66

作者：

Kuhn, K. J. ^{[1
]}

Murthy, A. ^{[1
]}

Kotlyar, R. ^{[1
]}

Kuhn, M. ^{[1
]}

机构：

[1] Intel Corp, Log Technol Dev, Hillsboro, OR 97124 USA

来源：

SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES | 2010年 / 33卷 / 06期

关键词：

STRAINED-SI; MOBILITY; ORIENTATION; GE;

D O I：

10.1149/1.3487530

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This paper discusses the historical role that SiGe has played in driving the CMOS scaling roadmap, including discussion of NMOS biaxial strain and PMOS uniaxial strain. The paper also discusses the potential future role that Ge or SiGe may play in CMOS scaling as a high mobility replacement for the Si channel. Challenges such as poor quality germanium oxide and the small Ge bandgap are reviewed in light of recent developments (high-k metal gate, and ultra-thin body devices) in MOSFET scaling.

引用

页码：3 / 17

页数：15

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