Fully vertical AlN-on-SiC Schottky barrier diodes

被引：0

作者：

Okumura, Hironori ^{[1
]}

Imura, Masataka ^{[2
]}

Miyazawa, Fuga ^{[1
]}

Mainini, Lorenzo ^{[1
,3
]}

机构：

[1] Univ Tsukuba, Inst Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

[2] Natl Inst Mat Sci, Res Ctr Funct Mat, Tsukuba, Ibaraki 3050044, Japan

[3] Politecn Milan, Dept Chem Mat & Chem Engn, Piazza Leonardo da Vinci 32, I-20133 Milan, Italy

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 10期

关键词：

vertical device; AlN; SBD; MOCVD; leakage current; hetero epitaxial layer; PARASITIC REACTION; ALUMINUM NITRIDE; GROWTH; TEMPLATES; EPITAXY; SI(111); LAYER; MOVPE;

D O I：

10.35848/1347-4065/ad7dc3

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated fully vertical Schottky barrier diodes (SBDs) that have a Si-doped AlN drift layer directly grown on an n-type 4H-SiC substrate by metal-organic CVD. The AlN SBD with a Ni anode showed a clear rectifying characteristic at 300-500 K and a rectification ratio of about 10-2. We found that the leakage current of the vertical AlN-on-SiC devices is affected by defects in the AlN drift layer and Schottky interface.

引用

页数：5

共 50 条

[21] Vertical diamond Schottky barrier diodes with curved field plates
Li, Qi
Liang, Yuesong
Chen, Genqiang
Liu, Zongchen
Zhang, Shumiao
Zeng, Jia
Zhang, Qianwen
Wang, Ruozheng
Zhang, Zhaoyang
Fan, Shuwei
Wang, Hong-Xing
APPLIED PHYSICS LETTERS, 2024, 124 (23)
[22] Study of thermal annealing on gallium oxide heteroepitaxial layers grown on SiC for vertical Schottky barrier diodes applications
Ku, Chai-Wei
Chung, Sheng-Ti
Tarntair, Fu-Gow
Hsiao, Ching-Lien
Horng, Ray-Hua
APPLIED SURFACE SCIENCE ADVANCES, 2024, 24
[23] High-current, high-voltage AlN Schottky barrier diodes
Quinones, C. E.
Khachariya, D.
Reddy, P.
Mita, S.
Almeter, J.
Bagheri, P.
Rathkanthiwar, S.
Kirste, R.
Pavlidis, S.
Kohn, E.
Collazo, R.
Sitar, Z.
APPLIED PHYSICS EXPRESS, 2024, 17 (10)
[24] Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV
Fu, Houqiang
Baranowski, Izak
Huang, Xuanqi
Chen, Hong
Lu, Zhijian
Montes, Jossue
Zhang, Xiaodong
Zhao, Yuji
IEEE ELECTRON DEVICE LETTERS, 2017, 38 (09) : 1286 - 1289
[25] Alphavoltaic Performance of 4H-SiC Schottky Barrier Diodes
Shilpa, A.
Murty, N. V. L. Narasimha
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2024, 71 (12) : 2507 - 2514
[26] Origin of leakage current in SiC Schottky barrier diodes at high temperature
Saitoh, HS
Kimoto, T
Matsunami, H
SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 997 - 1000
[27] On the viability of Au/3C-SiC Schottky barrier diodes
Eriksson, Jens
Weng, Ming-Hung
Roccaforte, Fabrizio
Giannazzo, Filippo
Di Franco, Salvatore
Leone, Stefano
Raineri, Vito
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 677 - +
[28] Fabrication of high voltage SiC Schottky barrier diodes by Ni metallization
Su, JN
Steckl, AJ
SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 697 - 700
[29] Barrier inhomogeneities of tungsten Schottky diodes on 4H-SiC
Hamida, A. Ferhat
Ouennoughi, Z.
Sellai, A.
Weiss, R.
Ryssel, H.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (04)
[30] Electrical and photoelectric properties of Au-SiC Schottky barrier diodes
Kosyachenko, LA
Sklyarchuk, VM
Sklyarchuk, YF
SOLID-STATE ELECTRONICS, 1998, 42 (01) : 145 - 151

← 1 2 3 4 5 →