High-current, high-voltage AlN Schottky barrier diodes

被引：0

作者：

Quiñones, C.E. ^{[1
]}

Khachariya, D. ^{[2
]}

Reddy, P. ^{[2
]}

Mita, S. ^{[2
]}

Almeter, J. ^{[1
]}

Bagheri, P. ^{[1
]}

Rathkanthiwar, S. ^{[1
]}

Kirste, R. ^{[2
]}

Pavlidis, S. ^{[3
]}

Kohn, E. ^{[2
]}

Collazo, R. ^{[1
]}

Sitar, Z. ^{[1
,2
]}

机构：

[1] Department of Materials Science and Engineering, North Carolina State University, Raleigh,NC,27606, United States

[2] Adroit Materials, Cary,NC,27518, United States

[3] Department of Electrical and Computer Engineering, North Carolina State University, Raleigh,NC,27606, United States

来源：

Applied Physics Express | 2024年 / 17卷 / 10期

关键词：

AlN Schottky barrier diodes with low ideality factor (2); high current density (>5 kA cm−2); and high breakdown voltage (680 V) are reported. The device structure consisted of a two-layer; quasi-vertical design with a lightly doped AlN drift layer and a highly doped Al0.75Ga0.25N ohmic contact layer grown on AlN substrates. A combination of simulation; current-voltage measurements; and impedance spectroscopy analysis revealed that the AlN/AlGaN interface introduces a parasitic electron barrier due to the conduction band offset between the two materials. This barrier was found to limit the forward current in fabricated diodes. Further; we show that introducing a compositionally-graded layer between the AlN and the AlGaN reduces the interfacial barrier and increases the forward current density of fabricated diodes by a factor of 104 © 2024 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd;

D O I：

10.35848/1882-0786/ad81c9

中图分类号：

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摘要：

引用

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[1] High-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD
Herath Mudiyanselage, Dinusha
Wang, Dawei
Da, Bingcheng
He, Ziyi
Fu, Houqiang
[J]. APPLIED PHYSICS EXPRESS, 2024, 17 (01)
[2] HIGH-VOLTAGE POWER SCHOTTKY DIODES
CORDES, LF
GARFINKE.M
[J]. IEEE TRANSACTIONS ON AEROSPACE AND ELECTRONIC SYSTEMS, 1974, AE10 (05) : 745 - 745
[3] HIGH-CURRENT HIGH-VOLTAGE RESISTOR
MANYLOV, VI
SHENDRIK, VN
[J]. INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1984, 27 (04) : 910 - 912
[4] HIGH-CURRENT AND HIGH-VOLTAGE STIMULATORS
SCHOLFIELD, CN
MURDOCK, M
[J]. JOURNAL OF NEUROSCIENCE METHODS, 1985, 12 (03) : 227 - 233
[5] THE PERFORMANCE OF HIGH-VOLTAGE FIELD RELIEVED SCHOTTKY-BARRIER DIODES
FISHER, CA
SHANNON, JM
PAXMAN, DH
SLATTER, JAG
[J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1985, 132 (06): : 257 - 260
[6] Power high-voltage and fast response Schottky barrier diamond diodes
Blank, V. D.
Bormashov, V. S.
Tarelkin, S. A.
Buga, S. G.
Kuznetsov, M. S.
Teteruk, D. V.
Kornilov, N. V.
Terentiev, S. A.
Volkov, A. P.
[J]. DIAMOND AND RELATED MATERIALS, 2015, 57 : 32 - 36
[7] BREAKDOWN VOLTAGE OF HIGH-VOLTAGE GAAS SCHOTTKY DIODES
ASHKINAZI, G
MEYLER, B
NATHAN, M
ZOLOTAREVSKI, L
ZOLOTAREVSKI, O
[J]. SOLID-STATE ELECTRONICS, 1993, 36 (12) : 1793 - 1794
[8] A DUAL HIGH-CURRENT HIGH-VOLTAGE DRIVER
SHIELDS, R
PEASE, RA
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1994, 29 (10) : 1186 - 1190
[9] HIGH-VOLTAGE HIGH-CURRENT GTO THYRISTORS
TAYLOR, PD
FINDLAY, WJ
DENYER, T
[J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1985, 132 (06): : 238 - 243
[10] THEORY AND EXPERIMENT FOR SILICON SCHOTTKY-BARRIER DIODES AT HIGH-CURRENT DENSITY
WILKINSON, JM
WILCOCK, JD
BRINSON, ME
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (01) : 45 - 50

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