Bottom Contact Engineering for Ambient Fabrication of >25% Durable Perovskite Solar Cells

被引:3
|
作者
Yuan, Ligang [1 ,2 ]
Zou, Shibing [2 ]
Zhang, Kaicheng [3 ]
Huang, Peng [4 ]
Dong, Yuyan [2 ]
Wang, Jiarong [2 ]
Fan, Kezhou [5 ,6 ]
Lam, Man Yu [5 ,6 ]
Wu, Xiao [7 ]
Cheng, Wei [4 ]
Tang, Ruijia [8 ]
Chen, Wenhao [1 ]
Liu, Weiqing [1 ]
Wong, Kam Sing [5 ,6 ]
Yan, Keyou [2 ]
机构
[1] Nanchang Hangkong Univ, Sch Testing & Photoelect Engn, Key Lab Optoelect Informat Percept & Instrumentat, Key Lab Nondestruct Testing,Minist Educ, Nanchang 330063, Peoples R China
[2] South China Univ Technol, Sch Environm & Energy, State Key Lab Luminescent Mat & Devices, Guangdong Prov Key Lab Solid Wastes Pollut Control, Guangzhou 510000, Peoples R China
[3] Friedrich Alexander Univ Erlangen Nuremberg, Inst Mat Elect & Energy Technol I MEET, Martensstr 7, D-91058 Erlangen, Germany
[4] Southwest Jiaotong Univ, Res Inst Frontier Sci, Chengdu 610031, Peoples R China
[5] Hong Kong Univ Sci & Technol, Dept Phys, Clearwater Bay, Hong Kong 999077, Peoples R China
[6] Hong Kong Univ Sci & Technol, William Mong Inst Nano Sci & Technol, Clearwater Bay, Hong Kong 999077, Peoples R China
[7] Chinese Univ Hong Kong, Dept Phys, Shatin, Hong Kong 999077, Peoples R China
[8] Beijing Univ Chem Technol, Coll Mat Sci & Engn, Beijing 100029, Peoples R China
基金
中国国家自然科学基金;
关键词
bottom contact; perovskite solar cell; photodegradation; SnO2; sodium gluconate;
D O I
10.1002/adma.202409261
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The bottom contact in perovskite solar cells (PSCs) is easy to cause deep trap states and severe instability issues, especially under maximum power point tracking (MPPT). In this study, sodium gluconate (SG) is employed to disperse tin oxide (SnO2) nanoparticles (NPs) and regulate the interface contact at the buried interface. The SG-SnO2 electron transfer layer (ETL) enabled the deposition of pinhole-free perovskite films in ambient air and improved interface contact by bridging effect. SG-SnO2 PSCs achieved an impressive power conversion efficiency (PCE) of 25.34% (certified as 25.17%) with a high open-circuit voltage (V-OC) exceeding 1.19 V. The V-OC loss is less than 0.34 V relative to the 1.53 eV bandgap, and the fill factor (FF) loss is only 2.02% due to the improved contact. The SG-SnO2 PSCs retained around 90% of their initial PCEs after 1000 h operation (T-90 = 1000 h), higher than T-80 = 1000 h for the control SnO2 PSC. Microstructure analysis revealed that light-induced degradation primarily occurred at the buried holes and grain boundaries and highlighted the importance of bottom-contact engineering.
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页数:9
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