Chalcogenide selectors for low voltage and high density memory applications

被引：0

作者：

Ambrosi, Elia ^{[1
]}

Wu, Cheng-Hsien ^{[1
]}

Kuo, Cheng-Chen ^{[1
]}

Hsu, Chen-Feng ^{[1
]}

Lee, Heng-Yuan ^{[1
]}

Lee, Tung-Ying ^{[1
]}

Bao, Xinyu ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co Ltd, Corp Res, Hsinchu, Taiwan

来源：

2024 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI TSA | 2024年

关键词：

D O I：

10.1109/VLSITSA60681.2024.10546430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Threshold selectors are essential components to enable high density and BEOL compatible non- volatile memory. Breakthroughs at the material and device level are necessary to employ this technology in low voltage logic chips. In this paper, we review the development of low voltage selectors based on the SiNGeCTe (SNGCT) amorphous chalcogenide material. SNGCT devices exhibit excellent stability and performance along with low switching voltage and low leakage characteristics. Finally, the selector integration with STT-MRAM memory is described, showing remarkable device performance.

引用

页数：2

共 50 条

[21] Discovery of new PVD chalcogenide materials for memory applications
1600, PennWell Corporation (60):
[22] An experience with Chalcogenide memristors, and implications on memory and computer applications
Escudero-Lopez, Manuel
Amat, Esteve
Rubio, Antonio
Pouyan, Peyman
2016 CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS 2016), 2016, : 249 - 254
[23] Low voltage floating supply in monolithic high voltage technology for high dV/dt applications
Dallago, E.
Ruzza, S.
Venchi, G.
Morini, S.
2007 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-6, 2007, : 1024 - 1028
[24] Discovery of new PVD chalcogenide materials for memory applications
Chen, Larry
Clark, Mark
Chen, Charlene
Cheng, Susan
Weling, Milind
SOLID STATE TECHNOLOGY, 2017, 60 (03) : 27 - 30
[25] High density Ru nanocrystal deposition for nonvolatile memory applications
Farmer, Damon B.
Gordon, Roy G.
Journal of Applied Physics, 2007, 101 (12):
[26] High density Ru nanocrystal deposition for nonvolatile memory applications
Farmer, Damon B.
Gordon, Roy G.
JOURNAL OF APPLIED PHYSICS, 2007, 101 (12)
[27] LOW-VOLTAGE SYSTEMS IN AREAS OF HIGH LOAD DENSITY
MUNKER, H
RAEHSE, G
ELEKTROTECHNISCHE ZEITSCHRIFT B-AUSGABE, 1973, 25 (20): : 538 - &
[28] Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications
Wu, Y. C.
Garello, K.
Kim, W.
Gupta, M.
Perumkunnil, M.
Kateel, V
Couet, S.
Carpenter, R.
Rao, S.
Van Beek, S.
Sethu, K. K. Vudya
Yasin, F.
Crotti, D.
Kar, G. S.
PHYSICAL REVIEW APPLIED, 2021, 15 (06)
[29] A High Density Converter for Mid Feeder Voltage Regulation of Low Voltage Distribution Feeders
Silversides, Richard
Green, Tim
Merlin, Michael M. C.
2014 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2014, : 1972 - 1978
[30] Analysis of the NAND-type DRAM-on-SGT for high-density and low-voltage memory.
Nakamura, H
Pesic, I
Sakuraba, H
Masuoka, F
PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2005, : 193 - 196

← 1 2 3 4 5 →